公开(公告)号：US10746923B2

公开(公告)日：2020-08-18

申请号：US16450725

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Hsing-Kuo Hsia ,  Kuo-Chiang Ting ,  Pin-Tso Lin ,  Sung-Hui Huang ,  Shang-Yun Hou ,  Chi-Hsi Wu

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/136 ,  G02B6/122

Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.

公开(公告)号：US11476184B2

公开(公告)日：2022-10-18

申请号：US16723434

申请日：2019-12-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Kuo-Chiang Ting ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Tu-Hao Yu ,  Chia-Hao Hsu ,  Pin-Tso Lin ,  Chia-Hsin Chen

IPC: H01L23/498 ,  H01L21/683 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00

Abstract: A semiconductor device includes a dielectric interposer, a first interconnection layer, an electronic component, a plurality of electrical conductors and a plurality of conductive structures. The dielectric interposer has a first surface and a second surface opposite to the first surface. The first interconnection layer is over the first surface of the dielectric interposer. The electronic component is over and electrically connected to the first interconnection layer. The electrical conductors are over the second surface of the dielectric interposer. The conductive structures are through the dielectric interposer, wherein the conductive structures are electrically connected to the first interconnection layer and the electrical conductors.

公开(公告)号：US12080638B2

公开(公告)日：2024-09-03

申请号：US17816376

申请日：2022-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Kuo-Chiang Ting ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Tu-Hao Yu ,  Chia-Hao Hsu ,  Pin-Tso Lin ,  Chia-Hsin Chen

IPC: H01L23/498 ,  H01L21/683 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49894 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/3171 ,  H01L24/09 ,  H01L24/13 ,  H01L24/17 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/17505 ,  H01L2924/3511

Abstract: A semiconductor device includes a dielectric interposer, a first redistribution layer, a second redistribution layer and conductive structures. The conductive structures are through the dielectric interposer, wherein the conductive structures are electrically connected to the first redistribution layer and the second redistribution layer. Each of the conductive structures has a tapered profile. A width of each of the conductive structures proximal to the first redistribution layer is narrower than a width of each of the conductive structure proximal to the second redistribution layer.

公开(公告)号：US20200003950A1

公开(公告)日：2020-01-02

申请号：US16450725

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Hsing-Kuo Hsia ,  Kuo-Chiang Ting ,  Pin-Tso Lin ,  Sung-Hui Huang ,  Shang-Yun Hou ,  Chi-Hsi Wu

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/136 ,  G02B6/122

Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.

公开(公告)号：US10515888B2

公开(公告)日：2019-12-24

申请号：US15707301

申请日：2017-09-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Kuo-Chiang Ting ,  Chi-Hsi Wu ,  Shang-Yun Hou ,  Tu-Hao Yu ,  Chia-Hao Hsu ,  Pin-Tso Lin ,  Chia-Hsin Chen

IPC: H01L23/498 ,  H01L21/683 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00

Abstract: A semiconductor device includes a dielectric interposer, a first interconnection layer, an electronic component, a plurality of electrical conductors and a plurality of conductive structures. The dielectric interposer has a first surface and a second surface opposite to the first surface. The first interconnection layer is over the first surface of the dielectric interposer. The electronic component is over and electrically connected to the first interconnection layer. The electrical conductors are over the second surface of the dielectric interposer. The conductive structures are through the dielectric interposer, wherein the conductive structures are electrically connected to the first interconnection layer and the electrical conductors.