CHIP PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20230017688A1

    公开(公告)日:2023-01-19

    申请号:US17377583

    申请日:2021-07-16

    摘要: A method for forming a chip package structure is provided. The method includes forming a dielectric layer over a redistribution structure. The redistribution structure includes a dielectric structure and a plurality of wiring layers in or over the dielectric structure. The method includes forming a first conductive bump structure and a shield bump structure over the dielectric layer. The first conductive bump structure is electrically connected to the wiring layers, and the shield bump structure is electrically insulated from the wiring layers. The method includes bonding a first chip structure to the redistribution structure through the first conductive bump structure. The first chip structure is electrically insulated from the shield bump structure, and the first chip structure extends across a first sidewall of the shield bump structure.

    SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20220336359A1

    公开(公告)日:2022-10-20

    申请号:US17231310

    申请日:2021-04-15

    IPC分类号: H01L23/538 H01L21/768

    摘要: A semiconductor package structure includes a first bottom electrical connector, an interposer over the first bottom electrical connector, and a first top electrical connector over the first top via structures. The interposer includes first bottom via structures in contact with the first bottom electrical connector. The interposer also includes a first trace of a first redistribution layer structure over the first bottom via structures. The interposer also includes first via structures over the first redistribution layer. The interposer also includes a first trace of a second redistribution layer structure over the first via structures. The interposer also includes second via structures over the second redistribution layer structure. The first bottom via structures, the first via structures, and the second via structures are separated from each other in a top view.

    SEMICONDUCTOR PACKAGE STRUCTURE
    9.
    发明公开

    公开(公告)号:US20240332197A1

    公开(公告)日:2024-10-03

    申请号:US18740881

    申请日:2024-06-12

    IPC分类号: H01L23/538 H01L21/768

    摘要: A semiconductor package structure includes a first bottom electrical connector and first bottom via structures over the first bottom electrical connector. The semiconductor package structure also includes a trace of a first redistribution layer structure over the first bottom via structures and first via structures over the trace of the first redistribution layer structure. The semiconductor package structure also includes a trace of a second redistribution layer structure over the first via structures and second via structures over the trace of the second redistribution layer structure. The semiconductor package structure also includes a trace of a third redistribution layer structure over the second via structures and partially vertically overlapping the trace of the first redistribution layer structure. The trace of the first redistribution layer structure, the trace of the second redistribution layer structure, and the trace of the third redistribution layer structure extend in different directions.