公开(公告)号：US11289589B2

公开(公告)日：2022-03-29

申请号：US17034744

申请日：2020-09-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Tetsu Ohtou ,  Yusuke Oniki

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/417

摘要： In a method for manufacturing a semiconductor device by using a gate replacement technology, a gate space constituted by dielectric material portions, in which a semiconductor fin channel layer is exposed, is formed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions, thereby filling the gate space.

公开(公告)号：US10056472B2

公开(公告)日：2018-08-21

申请号：US15152205

申请日：2016-05-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/3213 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/06

CPC分类号： H01L29/66795 ,  B82Y10/00 ,  H01L21/32134 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/785

摘要： A semiconductor structure and a method for forming the same are provided. The method includes forming a source/drain structure in a substrate and forming a metal layer over the source/drain structure. The method for manufacturing a semiconductor structure further includes performing an annealing process such that a portion of the metal layer reacts with the source/drain structure to form a metallic layer on the source/drain structure. The method for manufacturing a semiconductor structure further includes performing an etching process to remove an unreacted portion of the metal layer on the metallic layer and forming a contact over the metallic layer. In addition, the etching process includes using an etching solvent, and the etching solvent includes (a) a first component, including H2SO4, HCl, HF, H3PO4, or NH4OH and (b) a second component, including propylene carbonate, ethylene carbonate, diethyl carbonate, acetonitrile, or a combination thereof.

公开(公告)号：US10854736B2

公开(公告)日：2020-12-01

申请号：US16105830

申请日：2018-08-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L29/66 ,  H01L29/08 ,  H01L29/78 ,  H01L21/3213 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/45

摘要： Methods for manufacturing semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a source/drain structure over a substrate and forming a metal layer over the source/drain structure. The method for manufacturing a semiconductor structure further includes reacting a portion of the metal layer with the source/drain structure to form a metallic layer by using an etching solvent. In addition, the etching solvent includes (a) a first component and (b) a second component. The first component includes an acid, and the second component includes propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), or a combination thereof.

公开(公告)号：US10720344B2

公开(公告)日：2020-07-21

申请号：US16673777

申请日：2019-11-04

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/00 ,  H01L21/67 ,  H01L21/3063 ,  H01L29/66 ,  H01L21/28 ,  H01L21/02 ,  H01L29/423 ,  B82Y10/00 ,  C25F3/12 ,  H01L29/417 ,  C25F7/00 ,  H01L29/775 ,  H01L29/786 ,  H01L29/78 ,  C25D17/00 ,  H01L29/06 ,  H01L29/51

摘要： A method includes forming a semiconductor fin on a semiconductor substrate, the semiconductor fin comprising germanium, silicon, silicon germanium or any of III-V elements; forming a mask layer on a top portion of the semiconductor fin; and trimming the semiconductor fin, wherein trimming the semiconductor fin comprises: immersing the semiconductor substrate in a first electrolyte bath; and laterally removing a first portion of the semiconductor fin by supplying a first voltage to a counter electrode in the electrolyte bath and a second voltage to the semiconductor substrate, wherein the second voltage is negative.

公开(公告)号：US09385197B2

公开(公告)日：2016-07-05

申请号：US14525888

申请日：2014-10-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/465 ,  H01L21/306 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/08 ,  H01L29/78

CPC分类号： H01L29/66795 ,  B82Y10/00 ,  H01L21/32134 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/785

摘要： A semiconductor structure and a method for forming the same are provided. The method includes forming a source/drain structure in a substrate and forming a metal layer over the source/drain structure. The method for manufacturing a semiconductor structure further includes performing an annealing process such that a portion of the metal layer reacts with the source/drain structure to form a metallic layer on the source/drain structure. The method for manufacturing a semiconductor structure further includes performing an etching process to remove an unreacted portion of the metal layer on the metallic layer and forming a contact over the metallic layer. In addition, the etching process includes using an etching solvent, and the etching solvent includes (a) a first component, including H2SO4, HCl, HF, H3PO4, or NH4OH and (b) a second component, including propylene carbonate, ethylene carbonate, diethyl carbonate, acetonitrile, or a combination thereof.

摘要翻译： 提供半导体结构及其形成方法。 该方法包括在衬底中形成源极/漏极结构并在源极/漏极结构上形成金属层。 制造半导体结构的方法还包括进行退火处理，使得金属层的一部分与源极/漏极结构反应以在源极/漏极结构上形成金属层。 制造半导体结构的方法还包括进行蚀刻工艺以除去金属层上的金属层的未反应部分并在金属层上形成接触。 此外，蚀刻工艺包括使用蚀刻溶剂，并且蚀刻溶剂包括（a）第一组分，包括H 2 SO 4，HCl，HF，H 3 PO 4或NH 4 OH和（b）第二组分，包括碳酸亚丙酯，碳酸亚乙酯， 碳酸二乙酯，乙腈或其组合。

公开(公告)号：US09324820B1

公开(公告)日：2016-04-26

申请号：US14608805

申请日：2015-01-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L21/324 ,  H01L21/306 ,  H01L21/283 ,  H01L21/82 ,  H01L21/3065 ,  H01L21/8234

CPC分类号： H01L29/41783 ,  H01L21/32134 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823443 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/66507 ,  H01L29/66515 ,  H01L29/66795

摘要： A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a source/drain structure over a substrate and forming a metal layer on the source/drain structure. The method for manufacturing a semiconductor structure further includes reacting a portion of the metal layer with the source/drain structure to form a metallic layer on the source/drain structure. The method for manufacturing a semiconductor structure further includes removing an unreacted portion of the metal layer on the metallic layer by an etching process. In addition, the etching process includes using an etchant including HF and propylene carbonate, and the volume ratio of HF to propylene carbonate in the etchant is in a range from about 1:10 to about 1:10000.

摘要翻译： 提供半导体结构及其形成方法。 制造半导体结构的方法包括在衬底上形成源极/漏极结构，并在源极/漏极结构上形成金属层。 制造半导体结构的方法还包括使金属层的一部分与源极/漏极结构反应以在源极/漏极结构上形成金属层。 制造半导体结构的方法还包括通过蚀刻工艺去除金属层上的金属层的未反应部分。 此外，蚀刻工艺包括使用包括HF和碳酸丙烯酯的蚀刻剂，并且蚀刻剂中HF与碳酸亚丙酯的体积比在约1:10至约1：10000的范围内。

公开(公告)号：US10763114B2

公开(公告)日：2020-09-01

申请号：US15719245

申请日：2017-09-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki ,  Yasutoshi Okuno ,  Ta-Chun Ma

IPC分类号： H01L21/28 ,  H01L27/088 ,  H01L29/51 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/311

摘要： A method of fabricating a semiconductor device includes forming a semiconductor fin comprising a channel region for a fin field effect transistor (finFET). A gate oxide layer is then formed on the channel. The gate oxide layer is treated with a nitrogen containing agent so as to form a nitrogenous layer and an interfacial layer. The nitrogenous layer is then removed. A high-k dielectric layer is formed on the interfacial layer. A metal gate is formed on the high-k dielectric layer. The nitrogenous layer is removed by rinsing the semiconductor fin with deionized water. The gate oxide and interfacial layer contains the same material.

公开(公告)号：US09647115B1

公开(公告)日：2017-05-09

申请号：US14883452

申请日：2015-10-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yasutoshi Okuno ,  Cheng-Long Chen ,  Meng-Chun Chang ,  Sung-Li Wang ,  Yi-Fang Pai ,  Yusuke Oniki

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L29/24 ,  H01L29/165 ,  H01L29/04 ,  H01L23/535 ,  H01L21/768

CPC分类号： H01L29/7848 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/535 ,  H01L29/045 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/665 ,  H01L29/66795 ,  H01L29/7851

摘要： A method of forming a semiconductor structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure from the fin structure; (iii) forming a sacrificial structure surrounding the epitaxy structure; (iv) forming a dielectric layer covering the sacrificial structure; (v) forming an opening passing through the dielectric layer to partially expose the sacrificial structure; (vi) removing a portion of the sacrificial structure to expose a portion of the epitaxy structure; and (vii) forming a contact structure in contact with the exposed portion of the epitaxy structure. A semiconductor structure is disclosed herein as well.

公开(公告)号：US09412605B2

公开(公告)日：2016-08-09

申请号：US14454606

申请日：2014-08-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Andrew Joseph Kelly ,  Yusuke Oniki

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/311 ,  H01L21/316

CPC分类号： H01L21/30621 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02301 ,  H01L21/02658 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/324 ,  H01L21/823885 ,  H01L21/8258 ,  H01L29/0676 ,  H01L29/42372 ,  H01L29/7827

摘要： Embodiments of the present disclosure relate generally to a method of passivating and/or removing oxides on a semiconductor surface by using ammonium sulfide, the ammonium sulfide is formed by reacting ammonia and hydrogen sulfide in a semiconductor processing chamber, therefore the ammonium sulfide can be used to clean and remove oxides on a semiconductor surface without the concern of ESH and storage, the ammonium sulfide can also be used to passivate a semiconductor surface by forming a layer of sulfur, and thus preventing the reformation of native oxides, the layer of sulfur can be optionally removed to reduce the thickness of the semiconductor material.

摘要翻译： 本公开的实施方案一般涉及通过使用硫化铵钝化和/或去除半导体表面上的氧化物的方法，硫化铵通过在半导体处理室中使氨和硫化氢反应形成，因此可以使用硫化铵 在不考虑ESH和储存的情况下清洁和去除半导体表面上的氧化物，硫化铵也可以通过形成一层硫而用于钝化半导体表面，从而防止天然氧化物的重整，硫的层可以 可选地去除以减小半导体材料的厚度。

公开(公告)号：US10790381B2

公开(公告)日：2020-09-29

申请号：US16725537

申请日：2019-12-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Tetsu Ohtou ,  Yusuke Oniki

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/417

摘要： In a method for manufacturing a semiconductor device by using a gate replacement technology, a gate space constituted by dielectric material portions, in which a semiconductor fin channel layer is exposed, is formed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions, thereby filling the gate space.