-
公开(公告)号：US09601515B2
公开(公告)日：2017-03-21
申请号：US14294301
申请日：2014-06-03
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , G02F1/1345
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
-
公开(公告)号：US20160043158A1
公开(公告)日：2016-02-11
申请号：US14920972
申请日：2015-10-23
发明人： Shunpei YAMAZAKI , Jun Koyama , Tatsuya Arao , Munehiro Azami
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
-
公开(公告)号：US09171896B2
公开(公告)日：2015-10-27
申请号：US14614502
申请日：2015-02-05
发明人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
IPC分类号： H01L27/32 , H01L27/12 , H01L29/786
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。
-
公开(公告)号：US08952385B1
公开(公告)日：2015-02-10
申请号：US14322990
申请日：2014-07-03
发明人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
-
公开(公告)号：US11387263B2
公开(公告)日：2022-07-12
申请号：US16533915
申请日：2019-08-07
IPC分类号： H01L27/14 , H01L27/12 , G09G3/3233 , H01L27/32 , H01L51/52 , G02F1/1333 , H01L23/522 , H01L33/40
摘要： An object of the present invention is to decrease substantial resistance of art electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive, film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive, material than the resistance of an electrode and a wiring that is required to reduce the resistance.
-
公开(公告)号：US09899419B2
公开(公告)日：2018-02-20
申请号：US14924100
申请日：2015-10-27
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L29/786 , H01L27/12 , H01L21/3213 , H01L21/02 , B23K26/073 , H01L21/20 , H01L21/84 , H01L29/66
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
-
公开(公告)号：US20170271426A1
公开(公告)日：2017-09-21
申请号：US15614663
申请日：2017-06-06
发明人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
IPC分类号： H01L27/32 , H01L27/12 , H01L29/786
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
-
公开(公告)号：US20160240600A1
公开(公告)日：2016-08-18
申请号：US15134468
申请日：2016-04-21
发明人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
-
公开(公告)号：US20150155348A1
公开(公告)日：2015-06-04
申请号：US14614502
申请日：2015-02-05
发明人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
IPC分类号： H01L27/32
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
-
公开(公告)号：US08779431B2
公开(公告)日：2014-07-15
申请号：US14037437
申请日：2013-09-26
发明人： Shunpei Yamazaki , Jun Koyama , Tatsuya Arao , Munehiro Azami
IPC分类号： H01L29/04
CPC分类号： H01L27/3265 , H01L27/124 , H01L27/1255 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78633
摘要： A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
摘要翻译： 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。
-
-
-
-
-
-
-
-
-
搜索结果
32 条记录 (耗时 0.027 秒)
