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公开(公告)号：US20220415643A1
公开(公告)日：2022-12-29
申请号：US17660449
申请日：2022-04-25
发明人： Hae-Won CHOI , Anton KORIAKIN , Sangjine Park PARK , Keonyoung KIM , Sukhoon KIM , Seohyun KIM , Young-Hoo KIM , Kuntack LEE , Jihoon JEONG
摘要： In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.
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公开(公告)号：US20220415680A1
公开(公告)日：2022-12-29
申请号：US17664243
申请日：2022-05-20
发明人： Jaeseong LEE , Kihoon CHOI , Hae-Won CHOI , Jihoon JEONG , Seohyun KIM , Young-Hoo KIM , Sangjine PARK , Kuntack LEE
IPC分类号： H01L21/67 , H01L21/687
摘要： A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.
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3.发明申请公开(公告)号：US20190241844A1
公开(公告)日：2019-08-08
申请号：US16250069
申请日：2019-01-17
发明人： Mi Hyun PARK , Jung-Min OH , Young-Hoo KIM , Hyo San LEE , Tae Keun KIM , Ye Rim YEON , Hae Rim OH , Ji Soo JEONG , Min Hee CHO
IPC分类号： C11D11/00 , H01L21/67 , H01L21/687 , H01L21/02 , B08B3/10 , C11D17/00 , C11D1/14 , C11D3/20 , C11D3/34 , C11D3/32 , C11D3/28
CPC分类号： C11D11/0047 , B08B3/10 , C11D1/146 , C11D3/201 , C11D3/2017 , C11D3/2044 , C11D3/2096 , C11D3/28 , C11D3/32 , C11D3/3445 , C11D17/0008 , H01L21/02057 , H01L21/67051 , H01L21/68764
摘要： A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.035.
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公开(公告)号：US20200083063A1
公开(公告)日：2020-03-12
申请号：US16371461
申请日：2019-04-01
发明人： Seung-Min SHIN , Seok-Hoon KIM , Young-Hoo KIM , In-Gi KIM , Tae-Hong KIM , Sung-Hyun PARK , Jin-Woo LEE , Ji-Hoon CHA , Yong-Jun CHOI
摘要： A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号：US20190259641A1
公开(公告)日：2019-08-22
申请号：US16115943
申请日：2018-08-29
发明人： Young-Hoo KIM , Sung Hyun PARK , Hyun Woo NHO , Ji Hoon CHA , Yong Jun CHOI
IPC分类号： H01L21/67 , B01D29/66 , H01L21/311
摘要： A liquid chemical recycle system includes a buffer tank receiving a first liquid chemical from outside; a vacuum tank having a vacuum pump connected thereto and receiving the first liquid chemical from the buffer tank using the vacuum pump; and a recycle tank receiving the first liquid chemical from the vacuum tank and providing a second liquid chemical, which is a recycled first liquid chemical, to the outside, wherein the buffer tank includes a first injection portion, to which the first liquid chemical is provided, and a first supply portion, which provides the first liquid chemical to the vacuum tank, and a bottom of the buffer tank is downwardly inclined toward the first supply portion to prevent a material contained in the first liquid chemical from being accumulated in the buffer tank.
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公开(公告)号：US20200152486A1
公开(公告)日：2020-05-14
申请号：US16420776
申请日：2019-05-23
发明人： Young-Hoo KIM , Kuntack LEE , Yong-Jhin CHO , Chawon KOH , Sunghyun PARK , Hyosan LEE , Ji Hoon CHA , Soo Young CHOI
摘要： Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.
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公开(公告)号：US20140373881A1
公开(公告)日：2014-12-25
申请号：US14207903
申请日：2014-03-13
发明人： Jung-Min OH , Kyoungseob KIM , Young-Hoo KIM , Yongsun KO , Kuntack LEE , Yongmyung JUN , Yong-Jhin CHO
IPC分类号： H01L21/67
CPC分类号： H01L21/67051 , H01L21/68728 , H01L21/6875
摘要： A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.
摘要翻译： 一种基板处理装置，包括：支撑构件，其构造成支撑构造成围绕支撑构件的上部的基板容器;喷嘴构件，包括至少一个喷嘴，其构造成将处理溶液喷射到设置在支撑构件上的基板上; 并且可以设置连接到喷嘴并且被配置为通过主管将处理溶液供应到喷嘴的处理溶液供应单元。
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公开(公告)号：US20210343552A1
公开(公告)日：2021-11-04
申请号：US17376369
申请日：2021-07-15
发明人： Seung-Min SHIN , Seok-Hoon KIM , Young-Hoo KIM , In-Gi KIM , Tae-Hong KIM , Sung-Hyun PARK , Jin-Woo LEE , Ji-Hoon CHA , Yong-Jun CHOI
摘要： A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号：US20160071745A1
公开(公告)日：2016-03-10
申请号：US14706546
申请日：2015-05-07
发明人： Young-Hoo KIM , Il-Sang LEE , Yong-sun KO , Chang-Gil RYU , Kun-Tack LEE , Hyo-San LEE
IPC分类号： H01L21/67 , H01L21/683 , B23K26/146 , B08B3/08 , B08B7/00
CPC分类号： B23K26/146 , B08B3/10 , B08B7/0071 , C11D11/0047 , H01L21/67028 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L21/67253 , H01L21/68785 , H01L21/68792
摘要： A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.
摘要翻译： 提供点加热器和使用其的用于清洁晶片的装置。 晶片清洗装置包括加热器卡盘，其上安装有晶片，加热器卡盘构造成加热晶片的底面; 化学液体喷嘴，被配置为在所述晶片的顶表面上喷射化学液体以进行蚀刻; 以及点加热器，其被配置为加热晶片的顶表面的点。
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公开(公告)号：US20200343113A1
公开(公告)日：2020-10-29
申请号：US16690498
申请日：2019-11-21
发明人： Yong Jun CHOI , Seok Hoon KIM , Young-Hoo KIM , In Gi KIM , Sung Hyun PARK , Seung Min SHIN , Kun Tack LEE , Jinwoo LEE , Hun Jae JANG , Ji Hoon CHA
IPC分类号： H01L21/67 , H01L21/687 , B08B3/08
摘要： A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.
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