公开(公告)号：US20230043451A1

公开(公告)日：2023-02-09

申请号：US17737490

申请日：2022-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongmyung JUN ,  Hyunjin KO ,  Seohyun KIM ,  Jae Seong RYU ,  Inkwang BAE ,  Seungbu BAEK

IPC: H01L21/687 ,  H01L21/67

Abstract: A substrate processing chamber includes a housing providing a process space; a spin apparatus provided in the housing; and a fluid spraying nozzle configured to spray fluid into the process space, wherein the spin apparatus includes: a spin chuck configured to support a substrate; a rotation driving part configured to rotate the spin chuck; and a weight sensor configured to measure a weight of the substrate supported on the spin chuck.

公开(公告)号：US20150303036A1

公开(公告)日：2015-10-22

申请号：US14611618

申请日：2015-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Gil Hun SONG ,  Ki Sang EUM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01J37/32

CPC classification number: H01J37/32513

Abstract: A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region.

Abstract translation: 基板处理装置包括在处理室的上室或下室中的至少一个上的密封。 密封件密封地封闭基板处理区域，并且可以在防止在上部室和下部室之间形成间隙的位置。 下室包括限定包括密封件的槽的内壁和外壁。 内壁具有比外壁低的顶面。 密封件具有非对应的横截面形状，其具有面向衬底处理区域的凹部。

公开(公告)号：US20230046595A1

公开(公告)日：2023-02-16

申请号：US17854191

申请日：2022-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seohyun KIM ,  Ohchel KWON ,  Sangwoo KIM ,  Youngchan KIM ,  Hyunchul KIM ,  Hyunwoo NHO ,  Jaeseong RYU ,  Seungbu BAEK ,  Yongmyung JUN ,  Hyeongkwon JEONG ,  Daewoong CHOI

IPC: H01L21/67

Abstract: A supercritical fluid processing apparatus including a supercritical fluid supply module including a gas liquefier to liquefy a gas transferred from a gas supply and provide a liquefied fluid, a storage tank to change the liquefied fluid to a supercritical state and store a supercritical fluid, and an internal pipe connecting the gas liquefier to the storage tank; an exhaust fluid supply module including an exhaust fluid liquefier including a regeneration storage tank to collect a first exhaust fluid from the storage tank, and a refrigerant pipe to liquefy the first exhaust fluid in the regeneration storage tank and maintain the liquefied first exhaust fluid at a predetermined temperature/pressure; a first exhaust pipe to transfer the first exhaust fluid from the storage tank to the exhaust fluid liquefier; and a resupply pipe to resupply the first exhaust fluid collected and liquefied in the exhaust fluid liquefier to the storage tank.

公开(公告)号：US20150157955A1

公开(公告)日：2015-06-11

申请号：US14537318

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin CHO ,  Jung-Min OH ,  Yongmyung JUN ,  Yongsun KO ,  Kuntack LEE ,  Hyosan LEE

IPC: B01D3/00

CPC classification number: H01L21/02101 ,  H01L21/02057

Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

Abstract translation: 提供一种净化剂的净化方法。 该方法包括在第一温度或低于第一温度下加热包括蚀刻剂，第一清洁剂和第二清洁剂的第一混合溶液，并蒸馏蚀刻剂和第一清洁剂并除去第二清洁剂。 该方法包括冷凝或压缩蚀刻剂和第一清洗剂，形成包括蚀刻剂和第一清洁剂的第二混合溶液。 该方法包括在低于第二温度的温度下加热第二混合溶液，重新分配蚀刻剂并提取第一清洁剂。 第二个温度低于第一个温度。

公开(公告)号：US20140373881A1

公开(公告)日：2014-12-25

申请号：US14207903

申请日：2014-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min OH ,  Kyoungseob KIM ,  Young-Hoo KIM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/68728 ,  H01L21/6875

Abstract: A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.

Abstract translation: 一种基板处理装置，包括：支撑构件，其构造成支撑构造成围绕支撑构件的上部的基板容器;喷嘴构件，包括至少一个喷嘴，其构造成将处理溶液喷射到设置在支撑构件上的基板上; 并且可以设置连接到喷嘴并且被配置为通过主管将处理溶液供应到喷嘴的处理溶液供应单元。

公开(公告)号：US20140360041A1

公开(公告)日：2014-12-11

申请号：US14246274

申请日：2014-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Yongsun KO ,  Kuntack LEE ,  Kyoungseob KIM ,  SeokHoon KIM ,  Jung-Min OH ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/02 ,  F26B25/06

CPC classification number: F26B25/06 ,  H01L21/67017 ,  H01L21/67109

Abstract: A substrate treating apparatus includes a fluid supply unit to supply a fluid to a chamber. The substrate is dried in the chamber using the fluid in a supercritical state. The fluid supply unit includes a storing tank to store the fluid and a conversion tank connected to the storing tank through a connection tube and to the chamber through a supply tube. The conversion tank includes a heater to heat the fluid.

Abstract translation: 基板处理装置包括向腔室供给流体的流体供给单元。 使用处于超临界状态的流体在室中干燥基板。 流体供给单元包括：储存容器，存储流体;以及转换槽，通过连接管连接到储存箱，并通过供给管连接到室。 转换罐包括用于加热流体的加热器。