Device, installation and method for aligning and/or assembling filtering elements
    1.
    发明申请
    Device, installation and method for aligning and/or assembling filtering elements 审中-公开
    用于校准和/或组装过滤元件的装置,安装和方法

    公开(公告)号:US20090126863A1

    公开(公告)日:2009-05-21

    申请号:US11911210

    申请日:2006-03-06

    IPC分类号: B29C65/48

    摘要: A device for aligning and/or assembling filtering elements, in particular of particulate filter, an installation for assembling a filter from filtering elements incorporating the device, and a method for aligning and/or assembling monolithic filtering elements, in particular for making a particulate filter. The device includes a back plate whereon are set the filtering elements, the back plate being for example fixed on a base plate, and walls laterally foldable upwards by a folding mechanism, such that the filtering elements are mutually maintained tightly when the walls are in an upper position.

    摘要翻译: 用于对准和/或组装过滤元件,特别是颗粒过滤器的装置,用于将过滤元件组合在一起的装置,以及用于对准和/或组装整体过滤元件的方法,特别是用于制造颗粒过滤器 。 该装置包括背板,其中设置过滤元件,背板例如固定在基板上,以及通过折叠机构向上可横向折叠的壁,使得过滤元件相互保持紧密,当壁处于 上位

    Process for the preparation of silicon carbide whiskers
    4.
    发明授权
    Process for the preparation of silicon carbide whiskers 失效
    碳化硅晶须的制备方法

    公开(公告)号:US4904622A

    公开(公告)日:1990-02-27

    申请号:US157619

    申请日:1988-02-19

    IPC分类号: C30B29/62 C30B25/00

    CPC分类号: C30B25/005 C30B29/36

    摘要: The invention relates to a process for the preparation of silicon carbide whiskers by the reaction, in a non-oxidizing atmosphere, at a temperature of at least 1300.degree. C., of a charge composed of a mixture of carbon black and a source of silicon oxide, in which process the carbon black has an oxidability rate (measured by heating in air for 30 minutes at 600.degree. C.) of at least 85%, the silicon oxide source has a grain size of less than 100 .mu.m and the rate of rise in temperature between 1300.degree. and 1600.degree. C. is less than 30.degree. C.min.sup.-1 per minute if a static atmosphere prevails and at most 25.degree. C.min.sup.-1 if gas percolated. A stage of from 5 min to 5 h at 1600.degree. C. is optionally carried out.The carbon is preferably introduced into the reaction mixture in an over-stoichiometric quantity relative to the silica.The excess carbon is removed at the end of the reaction by oxidation in air at about 600.degree. C.

    摘要翻译: 本发明涉及通过在非氧化性气氛中在至少1300℃的温度下由碳黑和硅源的混合物反应制备碳化硅晶须的方法 氧化物,其中炭黑具有至少85%的氧化率(通过在空气中加热30分钟测量)为至少85%,氧化硅源的粒度小于100μm,速率 如果气体渗透,如果静态气氛为最高,最高为25℃/ min,则1300至1600℃之间的温度升高小于30℃/ min。 任选地在1600℃下5分钟至5小时的阶段进行。 碳相对于二氧化硅优选以超化学计量的量引入反应混合物。 在反应结束时通过在约600℃的空气中氧化除去多余的碳。

    Method of obtaining porous solids based on refractory carbide
    5.
    发明授权
    Method of obtaining porous solids based on refractory carbide 失效
    基于耐火碳化物获得多孔固体的方法

    公开(公告)号:US5460759A

    公开(公告)日:1995-10-24

    申请号:US261100

    申请日:1994-06-16

    申请人: Dominique Dubots

    发明人: Dominique Dubots

    CPC分类号: C04B38/0022

    摘要: The disclosure teaches a method for obtaining porous solids of refractory carbide with a large specific surface area. An exclusively organic, polymeric and/or copolymerizable compound, for example a resin, which can be coked and to provide a solid carbon skeleton, is mixed with a powder of metal, or metalloid, or a compound thereof which can be reduced by carbon. The mixture is shaped, the organic compound is cross-linked or hardened, and the compound is heat treated from 500.degree. to 1000.degree. C. to coke it, then heat treated to carburize it.

    摘要翻译: 本公开内容提出了获得具有大比表面积的难熔碳化物的多孔固体的方法。 可以被焦化并提供固体碳骨架的专有有机的,聚合的和/或可共聚的化合物,例如树脂与可以被碳还原的金属或类金属或其化合物的粉末混合。 混合物成型,有机化合物交联或硬化,化合物在500〜1000℃下进行热处理,使其焦化,然后进行热处理以使其渗碳。

    Process for direct nitriding of metals of low melting point
    6.
    发明授权
    Process for direct nitriding of metals of low melting point 失效
    直接氮化低熔点金属的工艺

    公开(公告)号:US5314675A

    公开(公告)日:1994-05-24

    申请号:US816235

    申请日:1992-01-03

    摘要: Process for direct nitriding of metals of relatively low melting point with the aid of a nitrogen-containing gas, in which a powder of at least one of the metals is mixed with a refractory powder, the mixture is heated under an atmosphere of nitrogen-containing gas at atmospheric pressure until the start of a rapid and exothermic nitriding reaction, and this reaction, which proceeds at a temperature generally higher than that of the melting point of the metals without apparent melting being observed, is allowed to proceed until all of the metals have been consumed, in order to obtain a highly porous solid mass which is easy to grind and is based on metal nitrides or metal oxynitrides.

    摘要翻译: 借助于含有至少一种金属的粉末与难熔粉末混合的含氮气体直接氮化相对低熔点的金属的方法,将混合物在含氮气氛下加热 在大气压下的气体直到开始快速和放热的氮化反应,并且该反应在通常高于未观察到熔融的金属的熔点的温度下进行,直到所有金属 已经被消耗,以获得易于研磨并且基于金属氮化物或金属氮氧化物的高度多孔的固体物质。

    Electrically melted multiphase material based on alumina and aluminium
oxycarbide and oxynitride
    7.
    发明授权
    Electrically melted multiphase material based on alumina and aluminium oxycarbide and oxynitride 失效
    基于氧化铝和碳氮化铝和氮氧化物的电熔多相材料

    公开(公告)号:US5023212A

    公开(公告)日:1991-06-11

    申请号:US432769

    申请日:1989-10-31

    摘要: The invention concerns a multiphase alumina-based material formed by a matrix of corundum in which microcrystalline phases of aluminium oxycarbide, aluminium oxynitride and aluminium oxycarbonitride are homogeneously dispersed. The combined carbon content is between 0.05 and 5% and the combined nitrogen content is from 0.05 to 5% by weight. The material can be produced by the controlled injection of carbon and nitrogen into a molten alumina bath. The material is used for abrasive products and refractory products with high levels of performance.

    摘要翻译: PCT No.PCT / FR89 / 00097 Sec。 371日期1989年10月31日第 102(e)日期1989年10月31日PCT 1989年3月8日PCT公布。 公开号WO89 / 08624 日本1989年9月21日。本发明涉及一种由刚玉基质形成的多相氧化铝基材料,其中碳氧化铝,氮氧化铝和碳氮氧化铝的微晶相均匀分散。 合并的碳含量为0.05〜5%,合并氮含量为0.05〜5重量%。 该材料可以通过将碳和氮控制注入熔融氧化铝浴来生产。 该材料用于具有高水平性能的磨料产品和耐火材料产品。

    Process for the production of silicon carbide with a large specific
surface area and use for high-temperature catalytic reactions
    8.
    发明授权
    Process for the production of silicon carbide with a large specific surface area and use for high-temperature catalytic reactions 失效
    用于生产具有大比表面积的碳化硅的方法,并用于高温催化反应

    公开(公告)号:US4914070A

    公开(公告)日:1990-04-03

    申请号:US254149

    申请日:1988-10-06

    摘要: The invention is directed to a process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m.sup.2 .multidot.g.sup.-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at elevated temperature which can attain 1000.degree. C., the process comprising reacting vapors of silicon monoxide SiO on carbon, being characterized by: generating vapors of SiO in a first reaction zone by heating a mixture SiO.sub.2 +Si at a temperature of between 1100.degree. and 1400.degree. C., under a pressure of between 0.1 and 1.5 hPa; and, in a second reaction zone, contacting the SiO vapors with reactive carbon in the divided state with a specific surface area that is at least equal to 200 m.sup.2 .multidot.g.sup.-1 at a temperature of between 1100.degree. and 1400.degree. C. Preferably, the reactive carbon is doped by an addition of from 1 to 10% by weight of a metallic element selected from uranium, cerium, titanium, zirconium, hafnium and lanthanides.

    摘要翻译: 本发明涉及一种用于生产碳化硅微细颗粒的方法,该方法由具有至少100m 2×g -1的比表面积的亚微米颗粒的聚集体形成,特别是用作载体 用于石油化学的催化剂,以及在可以达到1000℃的升高的温度下进行催化反应,该方法包括使一氧化碳SiO的蒸汽反应在碳上,其特征在于:通过加热混合物SiO 2 +产生第一反应区中的SiO的蒸汽, Si在1100至1400℃的温度下,在0.1至1.5hPa的压力下; 并且在第二反应区中,使分解状态的SiO蒸气与至少等于200m 2×g-1的比表面积在1100〜1400℃的温度下接触。优选地,反应性 通过加入1至10重量%的选自铀,铈,钛,锆,铪和镧系元素的金属元素来掺杂碳。

    Catalytic system particularly for the postcombustion of exhaust gases
and a method of producing such a system
    10.
    发明授权
    Catalytic system particularly for the postcombustion of exhaust gases and a method of producing such a system 失效
    特别是用于排气的催化系统及其生产方法

    公开(公告)号:US5196389A

    公开(公告)日:1993-03-23

    申请号:US873198

    申请日:1992-04-24

    申请人: Dominique Dubots

    发明人: Dominique Dubots

    摘要: The invention relates to a catalytic system and to a method of producing such a system.The catalytic system consists of a support on which the catalytically active product is deposited. The support has mechanical or physical properties which are of interest in terms of the required working conditions, but a poor specific surface area. The catalytically active product, a metallic carbide, is obtained by coating the support in a suspension of a reducible compound of the metal in a solution of an organic compound, carbonizing this compound, reducing the metallic compound and carburizing the metal. The carbide thus obtained has a high specific surface area.Preferably, the support consists of silicon carbide produced by carbonizing a paste containing silicon, carbon and an organic resin.The invention is applicable to any form of catalyst but in particular to the monolithic catalysts intended for treating exhaust gases.

    摘要翻译: 本发明涉及一种催化系统及其制造方法。 催化体系由沉积有催化活性产物的载体组成。 载体具有在所需工作条件方面感兴趣的机械或物理性能,但是比表面积差。 催化活性产物金属碳化物通过将载体在可还原化合物的悬浮液中涂覆在有机化合物的溶液中,使该化合物碳化,还原金属化合物和使金属渗碳而获得。 由此获得的碳化物具有高比表面积。 优选地,载体由通过碳化含有硅,碳和有机树脂的糊料生产的碳化硅组成。 本发明适用于任何形式的催化剂,特别适用于用于处理废气的整体式催化剂。