Process for the production of silicon carbide with a large specific
surface area and use for high-temperature catalytic reactions
    4.
    发明授权
    Process for the production of silicon carbide with a large specific surface area and use for high-temperature catalytic reactions 失效
    用于生产具有大比表面积的碳化硅的方法,并用于高温催化反应

    公开(公告)号:US4914070A

    公开(公告)日:1990-04-03

    申请号:US254149

    申请日:1988-10-06

    摘要: The invention is directed to a process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m.sup.2 .multidot.g.sup.-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at elevated temperature which can attain 1000.degree. C., the process comprising reacting vapors of silicon monoxide SiO on carbon, being characterized by: generating vapors of SiO in a first reaction zone by heating a mixture SiO.sub.2 +Si at a temperature of between 1100.degree. and 1400.degree. C., under a pressure of between 0.1 and 1.5 hPa; and, in a second reaction zone, contacting the SiO vapors with reactive carbon in the divided state with a specific surface area that is at least equal to 200 m.sup.2 .multidot.g.sup.-1 at a temperature of between 1100.degree. and 1400.degree. C. Preferably, the reactive carbon is doped by an addition of from 1 to 10% by weight of a metallic element selected from uranium, cerium, titanium, zirconium, hafnium and lanthanides.

    摘要翻译: 本发明涉及一种用于生产碳化硅微细颗粒的方法,该方法由具有至少100m 2×g -1的比表面积的亚微米颗粒的聚集体形成,特别是用作载体 用于石油化学的催化剂,以及在可以达到1000℃的升高的温度下进行催化反应,该方法包括使一氧化碳SiO的蒸汽反应在碳上,其特征在于:通过加热混合物SiO 2 +产生第一反应区中的SiO的蒸汽, Si在1100至1400℃的温度下,在0.1至1.5hPa的压力下; 并且在第二反应区中,使分解状态的SiO蒸气与至少等于200m 2×g-1的比表面积在1100〜1400℃的温度下接触。优选地,反应性 通过加入1至10重量%的选自铀,铈,钛,锆,铪和镧系元素的金属元素来掺杂碳。