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1.发明公开公开(公告)号：US20240027899A1
公开(公告)日：2024-01-25
申请号：US18199843
申请日：2023-05-19
申请人： SAMSUNG SDI CO., LTD
发明人： Seung HAN , Sangkyun IM , Minyoung LEE , Jimin KIM , Yaeun SEO , Bukeun OH
CPC分类号： G03F7/0042 , G03F7/2006 , G03F7/11
摘要： A semiconductor photoresist composition includes a first organometallic compound, a second organometallic compound, and a solvent. A method of forming patterns utilizing the same is provided.
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2.发明申请公开(公告)号：US20150021763A1
公开(公告)日：2015-01-22
申请号：US14334767
申请日：2014-07-18
发明人： Woo Chul NA , Seung HAN
CPC分类号： H01L23/295 , C08K7/18 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L2224/14131 , H01L2224/16225 , H01L2224/16227 , H01L2224/1713 , H01L2224/2929 , H01L2224/29298 , H01L2224/29386 , H01L2224/32225 , H01L2224/73204 , H01L2224/81192 , H01L2924/00014 , H01L2924/12042 , H01L2924/15747 , H01L2924/00 , H01L2924/0665 , H01L2924/053 , H01L2924/207 , H01L2224/13099
摘要： An epoxy resin composition includes an inorganic filler, an epoxy resin, and a curing agent. The inorganic filler has an average particle diameter D50 from about 2 μm to about 10 μm, an average particle diameter D10 of about 3 μm or less, and an average particle diameter D90 from about 6 μm to about 15 μm. Inorganic filler particles having a particle diameter of about 25 μm or more constitute about 0.1 wt % or less of the inorganic filler.
摘要翻译： 环氧树脂组合物包括无机填料，环氧树脂和固化剂。 无机填料的平均粒径D50为约2μm〜约10μm，平均粒径D10为约3μm以下，平均粒径D90为约6μm〜约15μm。 粒径约25μm以上的无机填料粒子构成无机填料的0.1重量％以下。
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3.发明公开公开(公告)号：US20240168375A1
公开(公告)日：2024-05-23
申请号：US18484313
申请日：2023-10-10
发明人： Minyoung LEE , Seung HAN , Sangkyun IM , Jimin KIM , Yaeun SEO , Gyeong Ryeong BAK
CPC分类号： G03F7/0044 , C07F7/2224
摘要： A semiconductor photoresist composition including an organometallic compound, an additive represented by Chemical Formula 1, and a solvent, and a method of forming uses the semiconductor photoresist composition. Details of Chemical Formula 1 are as defined in the specification.
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4.发明申请公开(公告)号：US20210356861A1
公开(公告)日：2021-11-18
申请号：US17306820
申请日：2021-05-03
发明人： Seung HAN , Jaehyun KIM , Kyungsoo MOON , Changsoo WOO , Seungyong CHAE , Ran NAMGUNG , Hwansung CHEON
IPC分类号： G03F7/004 , C07F7/22 , H01L21/027
摘要： A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition.
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5.发明申请公开(公告)号：US20210109442A1
公开(公告)日：2021-04-15
申请号：US17036693
申请日：2020-09-29
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Ran NAMGUNG , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
IPC分类号： G03F7/004 , C07F7/22 , H01L21/311 , H01L21/3213 , H01L21/027
摘要： Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.
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6.发明申请PYRIDINIUM-BASED COMPOUND, EPOXY RESIN COMPOSITION COMPRISING SAME, AND APPARATUS MANUFACTURED USING SAME 有权基于吡啶鎓的化合物，包含其的环氧树脂组合物和使用其制备的装置公开(公告)号：US20160333136A1
公开(公告)日：2016-11-17
申请号：US15111337
申请日：2014-05-09
发明人： Dong Hwan LEE , Min Gyum KIM , Jung Seob KIM , Jin Min CHEON , Hwan Sung CHEON , Seung HAN
IPC分类号： C08G59/40 , H01L23/29 , B01J31/02 , C08L63/00 , C07D213/04 , C07D213/85
CPC分类号： C08G59/4014 , B01J31/02 , B01J31/0271 , C07D213/04 , C07D213/30 , C07D213/84 , C07D213/85 , C08G59/245 , C08G59/621 , C08G59/686 , C08L63/00 , H01L23/295 , H01L23/3121 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125
摘要： The present invention relates to a pyridinium-based compound of chemical formula 1, an epoxy resin composition comprising the same, and an apparatus manufactured by using the same.
摘要翻译： 本发明涉及化学式1的吡啶鎓系化合物，包含该化合物的环氧树脂组合物和使用该化合物的制造装置。
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7.发明公开公开(公告)号：US20240061336A1
公开(公告)日：2024-02-22
申请号：US18323358
申请日：2023-05-24
发明人： Changsoo WOO , Seung HAN , Seungyong CHAE , Minyoung LEE , Jimin KIM , Sumin JANG , Sangkyun IM , Yaeun SEO , Eunmi KANG , Soobin LIM , Kyungsoo MOON
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/0044
摘要： A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.
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公开(公告)号：US20230223262A1
公开(公告)日：2023-07-13
申请号：US18000917
申请日：2021-08-20
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Taeho KIM , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
IPC分类号： H01L21/027 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/0274 , H01L21/32135 , H01L21/32139 , H01L21/31116
摘要： Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.
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9.发明申请公开(公告)号：US20220197138A1
公开(公告)日：2022-06-23
申请号：US17454453
申请日：2021-11-10
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
摘要： A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.
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10.发明申请公开(公告)号：US20200348591A1
公开(公告)日：2020-11-05
申请号：US16859682
申请日：2020-04-27
发明人： Jaehyun KIM , Kyung Soo MOON , Seungyong CHAE , Ran NAMGUNG , Seung HAN
IPC分类号： G03F7/004 , C07F7/22 , H01L21/027 , H01L21/308
摘要： A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.
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