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1.发明公开公开(公告)号：US20240134273A1
公开(公告)日：2024-04-25
申请号：US18456127
申请日：2023-08-25
发明人： Kyungsoo MOON , Young Keun KIM , Dong Wan RYU
IPC分类号： G03F7/004 , C07F7/22 , H01L21/027
CPC分类号： G03F7/0042 , C07F7/2224 , C07F7/226 , C07F7/2284 , H01L21/0271
摘要： Provided are a semiconductor photoresist composition including an organotin compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns using the same. The method of forming patterns may include forming an etching-objective layer on a substrate, coating the semiconductor photoresist composition on the etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.
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2.发明申请公开(公告)号：US20210311387A1
公开(公告)日：2021-10-07
申请号：US17217941
申请日：2021-03-30
发明人： Changsoo WOO , Eunmi KANG , Jaehyun KIM , Jimin KIM , Taeho KIM , Ran NAMGUNG , Kyungsoo MOON , Hwansung CHEON , Seungyong CHAE , Seung HAN
IPC分类号： G03F7/004 , C07F7/22 , H01L21/027
摘要： A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.
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3.发明申请公开(公告)号：US20210356861A1
公开(公告)日：2021-11-18
申请号：US17306820
申请日：2021-05-03
发明人： Seung HAN , Jaehyun KIM , Kyungsoo MOON , Changsoo WOO , Seungyong CHAE , Ran NAMGUNG , Hwansung CHEON
IPC分类号： G03F7/004 , C07F7/22 , H01L21/027
摘要： A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition.
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4.发明申请公开(公告)号：US20210109442A1
公开(公告)日：2021-04-15
申请号：US17036693
申请日：2020-09-29
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Ran NAMGUNG , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
IPC分类号： G03F7/004 , C07F7/22 , H01L21/311 , H01L21/3213 , H01L21/027
摘要： Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.
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5.发明公开公开(公告)号：US20240061336A1
公开(公告)日：2024-02-22
申请号：US18323358
申请日：2023-05-24
发明人： Changsoo WOO , Seung HAN , Seungyong CHAE , Minyoung LEE , Jimin KIM , Sumin JANG , Sangkyun IM , Yaeun SEO , Eunmi KANG , Soobin LIM , Kyungsoo MOON
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/0044
摘要： A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.
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公开(公告)号：US20230223262A1
公开(公告)日：2023-07-13
申请号：US18000917
申请日：2021-08-20
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Taeho KIM , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
IPC分类号： H01L21/027 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/0274 , H01L21/32135 , H01L21/32139 , H01L21/31116
摘要： Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.
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7.发明申请公开(公告)号：US20220197138A1
公开(公告)日：2022-06-23
申请号：US17454453
申请日：2021-11-10
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
摘要： A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.
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公开(公告)号：US20220194968A1
公开(公告)日：2022-06-23
申请号：US17454447
申请日：2021-11-10
发明人： Kyungsoo MOON
摘要： A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed. Specific details of Chemical Formula 1 are as defined in the specification.
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