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公开(公告)号:US20230361150A1
公开(公告)日:2023-11-09
申请号:US18130014
申请日:2023-04-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeyeon Park , Boseong Kim , Yunki Lee
IPC: H01L27/146
CPC classification number: H01L27/14685 , H01L27/14621 , H01L27/14607
Abstract: A manufacturing method of an image sensor includes, operations of: forming a color filter layer over a plurality of pixel regions having a plurality of photodetectors and arranged in a matrix on a substrate, and patterning the color filter layer with a mask including patterns disposed adjacently in a diagonal direction of the matrix, to form color filters for some of the plurality of pixel regions on the substrate. Each of the patterns may include a rectangular main pattern and sub-patterns outwardly extending from corners of the main patterns. Sizes of sub-patterns of different adjacent patterns that face each other may have sizes that are smaller than other sub-patterns of the adjacent patterns.
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公开(公告)号:US20220406836A1
公开(公告)日:2022-12-22
申请号:US17672912
申请日:2022-02-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Taehan Kim , Cheonho Park , Jaeho Choi , Bumsuk Kim , Jungsaeng Kim , Yunki Lee
IPC: H01L27/146
Abstract: An image sensor includes a pixel array including a plurality of pixels arranged in directions, parallel to an upper surface of a substrate, each of the plurality of pixels including at least one photodiode, a color filter above the at least one photodiode, and a pixel circuit below the at least one photodiode, and a logic circuit configured to obtain a pixel signal from the plurality of pixels. The plurality of pixels include red pixels each having a red color filter, green pixels each having a green color filter, and blue pixels each having a blue color filter, and a size of a first red color filter included in a first red pixel, disposed in a first area separated by a first distance from a center of the pixel array, is greater than a size of a second red color filter included in a second red pixel, disposed in a second area separated from the center of the pixel array by a second distance, greater than the first distance.
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公开(公告)号:US12191331B2
公开(公告)日:2025-01-07
申请号:US18319101
申请日:2023-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Masato Fujita , Yunki Lee , Eunsub Shim , Kyungho Lee , Bumsuk Kim , Taehan Kim
IPC: H01L27/146 , H04N25/59 , H04N25/704 , H04N25/709 , H04N25/772
Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.
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公开(公告)号:US20220384508A1
公开(公告)日:2022-12-01
申请号:US17703217
申请日:2022-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongmin Keum , Taehan Kim , Bumsuk Kim , Junsung Park , Kwanghee Lee , Yunki Lee
IPC: H01L27/146 , H01L21/66 , H04N5/369 , H04N5/341
Abstract: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.
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公开(公告)号:US20220181372A1
公开(公告)日:2022-06-09
申请号:US17507374
申请日:2021-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taesung LEE , Dongmin Keum , Bumsuk Kim , Jinho Kim , Junsung Park , Kwanghee Lee , Dongkyu Lee , Yunki Lee
IPC: H01L27/146 , H04N5/232
Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.
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公开(公告)号:US12302659B2
公开(公告)日:2025-05-13
申请号:US17402756
申请日:2021-08-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jonghoon Park , Bumsuk Kim , Yunki Lee , Bomi Kim , Kwanhee Lee , Yoongi Joung
Abstract: A pixel array including: a plurality of pixel groups, each pixel group including: a plurality of unit pixels respectively including photoelectric conversion elements disposed in a semiconductor substrate; trench structures disposed in the semiconductor substrate and extending in a vertical direction from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate to electrically and optically separate the photoelectric conversion elements from each other; and a microlens disposed above or below the semiconductor substrate, the microlens covering all of the photoelectric conversion elements in the plurality of unit pixels to focus an incident light to the photoelectric conversion elements.
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公开(公告)号:US11552118B2
公开(公告)日:2023-01-10
申请号:US16945965
申请日:2020-08-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sanghoon Kim , Yunki Lee , Hyeongdong Jo
IPC: H01L27/146 , G01J1/04 , G01J1/44 , G02B5/20 , G02B3/00
Abstract: An image sensor including: a substrate which has a first surface and a second surface opposite to the first surface and pixels arranged in a two-dimensional array, wherein each of the pixels includes a photodiode; a multi-wiring layer arranged on the first surface of the substrate; a color filter layer arranged on the second surface of the substrate and including color filters that respectively correspond to the pixels; and a lens layer arranged on the color filter layer and including a double-sided spherical lens, wherein the double-sided spherical lens includes at least two material layers having different refractive indexes.
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公开(公告)号:US10008535B2
公开(公告)日:2018-06-26
申请号:US15090883
申请日:2016-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seokha Lee , Kyungah Jeon , Yunki Lee
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion parts and a pixel isolation trench extending from a surface of the substrate between the photoelectric conversion parts, a first fixed charge film directly on the surface of the substrate, a second fixed charge film directly on the first fixed charge film and an inner wall of the pixel isolation trench, and an insulating layer directly on the second fixed charge film, the insulating layer configured to fill the pixel isolation trench.
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公开(公告)号:US20240055455A1
公开(公告)日:2024-02-15
申请号:US18207546
申请日:2023-06-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghun Kim , Chulsoo Choi , Jonghoon Park , Yunki Lee
IPC: H01L27/146 , G02B3/08
CPC classification number: H01L27/14627 , H01L27/14685 , H01L27/14645 , G02B3/08 , G02B2207/101
Abstract: An image sensor is provided. The image sensor includes: a photodetector with a plurality of photodetection cells; an interlayer device provided on the photodetector; and a color separation lens layer including a plurality of nano-posts disposed on the interlayer device and spaced apart from each other, the plurality of nano-posts focusing light of different spectra to at least two of the plurality of photodetection cells. Each of the plurality of nano-posts includes a first refractive layer having a first refractive index and a cylindrical shape, and a second refractive layer having a second refractive index and surrounding bottom and side surfaces of the first refractive layer, and the second refractive index is higher than the first refractive index.
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公开(公告)号:US20230290794A1
公开(公告)日:2023-09-14
申请号:US18319101
申请日:2023-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Masato FUJITA , Yunki Lee , Eunsub Shim , Kyungho Lee , Bumsuk Kim , Taehan Kim
IPC: H01L27/146 , H04N25/59 , H04N25/704 , H04N25/709 , H04N25/772
CPC classification number: H01L27/14612 , H01L27/14645 , H01L27/14627 , H01L27/14636 , H01L27/1463 , H01L27/14603 , H01L27/14621 , H04N25/59 , H04N25/704 , H04N25/709 , H04N25/772
Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.
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