公开(公告)号：US20240321926A1

公开(公告)日：2024-09-26

申请号：US18598417

申请日：2024-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masato FUJITA ,  Jaewoong KIM

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14614 ,  H01L27/14645

Abstract: An image sensor includes: a first stack including: a first semiconductor substrate including a first surface and a second surface opposite to the first surface, a photoelectric conversion region in the first semiconductor substrate, and a floating diffusion region in the first semiconductor substrate, the floating diffusion region being configured to store charges transferred from the photoelectric conversion region; a second stack including: a second semiconductor substrate including a first surface and a second surface opposite the first surface, and a transmission gate penetrating through the second semiconductor substrate and extending into the first stack; and an insulation layer between the first stack and the second stack.

公开(公告)号：US20240186355A1

公开(公告)日：2024-06-06

申请号：US18437691

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato FUJITA ,  Doosik SEOL ,  Kyungduck LEE ,  Kyungho LEE ,  Taesub JUNG

IPC: H01L27/146 ,  H04N25/704 ,  H04N25/79

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N25/704 ,  H04N25/79

Abstract: An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between a plurality of pixels. Each of the plurality of pixels include a pixel circuit below at least one photodiode. The logic circuit acquires a pixel signal from the plurality of pixels. The pixel array includes at least one autofocusing pixel, which includes a first photodiode, a second photodiode, a pixel internal isolation layer between the first and second photodiodes, and a microlens on the first and second photodiodes. The pixel internal isolation layer includes a first pixel internal isolation layer and a second pixel internal isolation layer, separated from each other in a first direction, perpendicular to the upper surface of the substrate, and the first pixel internal isolation layer and the second pixel internal isolation layer include different materials.

公开(公告)号：US20220344384A1

公开(公告)日：2022-10-27

申请号：US17537926

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ji JUNG ,  Doo Sik SEOL ,  Sung Min AN ,  Kyung Duck LEE ,  Kyung Ho LEE ,  Seung Ki JUNG ,  You Jin JEONG ,  Tae Sub JUNG ,  Jeong Jin CHO ,  Masato FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US20230007163A1

公开(公告)日：2023-01-05

申请号：US17941302

申请日：2022-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Kyungho LEE ,  Masato FUJITA

IPC: H04N5/232 ,  G03B13/16 ,  H01L27/146

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

公开(公告)号：US20210028204A1

公开(公告)日：2021-01-28

申请号：US16825245

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masato FUJITA ,  Kyungho LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: A pixel array included in an auto-focus image sensor includes a substrate, a plurality of pixels, a deep device isolation region and a plurality of first ground regions. The substrate includes a first surface on which a gate electrode is disposed and a second surface opposite to the first surface. The plurality of pixels are disposed in the substrate, and include a plurality of first pixels configured to detect a phase difference and a plurality of second pixels configured to detect an image. The deep device isolation region is disposed in the substrate, extends substantially vertically from the second surface of the substrate to isolate the plurality of pixels from each other. The plurality of first ground regions are disposed adjacent to the first surface in the substrate and adjacent to only at least some of the plurality of first pixels.

公开(公告)号：US20240234453A9

公开(公告)日：2024-07-11

申请号：US18381908

申请日：2023-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masato FUJITA

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. The vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. The vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.

公开(公告)号：US20210120168A1

公开(公告)日：2021-04-22

申请号：US16941813

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Kyungho LEE ,  Masato FUJITA

IPC: H04N5/232 ,  G03B13/16 ,  H01L27/146

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

公开(公告)号：US20240136375A1

公开(公告)日：2024-04-25

申请号：US18381908

申请日：2023-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masato FUJITA

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. The vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. The vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.

公开(公告)号：US20210175269A1

公开(公告)日：2021-06-10

申请号：US16996047

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato FUJITA ,  Yunki LEE ,  Eunsub SHIM ,  Kyungho LEE ,  Bumsuk KIM ,  Taehan KIM

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/369 ,  H04N5/3745

Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

公开(公告)号：US20250107255A1

公开(公告)日：2025-03-27

申请号：US18654727

申请日：2024-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduck LEE ,  Taesub JUNG ,  Masato FUJITA ,  Yunha NA ,  Seungki BAEK ,  Doosik SEOL ,  Sungmin AN ,  Seungki JUNG

IPC: H01L27/146

Abstract: An image sensor includes pixels, each including two photodiodes arranged side-by-side in a first direction, a deep trench isolation structure, a floating diffusion region, and transfer gates. The deep trench isolation structure includes an inner structure that extends in a second direction perpendicular to the first direction and that separates the two PDs of pixel from each other in the first direction, and an outer structure that extends in the first and second directions and that separates the pixels from each other in the first and second directions. The floating diffusion region is arranged between a center portion of the outer structure extending in the first direction and an edge of the inner structure. The transfer gates are disposed adjacent to the floating diffusion region such that one or more transfer gates are disposed on each photodiode. For each pixel, the two photodiodes share the floating diffusion region.