公开(公告)号：US20240186355A1

公开(公告)日：2024-06-06

申请号：US18437691

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato FUJITA ,  Doosik SEOL ,  Kyungduck LEE ,  Kyungho LEE ,  Taesub JUNG

IPC: H01L27/146 ,  H04N25/704 ,  H04N25/79

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N25/704 ,  H04N25/79

Abstract: An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between a plurality of pixels. Each of the plurality of pixels include a pixel circuit below at least one photodiode. The logic circuit acquires a pixel signal from the plurality of pixels. The pixel array includes at least one autofocusing pixel, which includes a first photodiode, a second photodiode, a pixel internal isolation layer between the first and second photodiodes, and a microlens on the first and second photodiodes. The pixel internal isolation layer includes a first pixel internal isolation layer and a second pixel internal isolation layer, separated from each other in a first direction, perpendicular to the upper surface of the substrate, and the first pixel internal isolation layer and the second pixel internal isolation layer include different materials.

公开(公告)号：US20250107255A1

公开(公告)日：2025-03-27

申请号：US18654727

申请日：2024-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduck LEE ,  Taesub JUNG ,  Masato FUJITA ,  Yunha NA ,  Seungki BAEK ,  Doosik SEOL ,  Sungmin AN ,  Seungki JUNG

IPC: H01L27/146

Abstract: An image sensor includes pixels, each including two photodiodes arranged side-by-side in a first direction, a deep trench isolation structure, a floating diffusion region, and transfer gates. The deep trench isolation structure includes an inner structure that extends in a second direction perpendicular to the first direction and that separates the two PDs of pixel from each other in the first direction, and an outer structure that extends in the first and second directions and that separates the pixels from each other in the first and second directions. The floating diffusion region is arranged between a center portion of the outer structure extending in the first direction and an edge of the inner structure. The transfer gates are disposed adjacent to the floating diffusion region such that one or more transfer gates are disposed on each photodiode. For each pixel, the two photodiodes share the floating diffusion region.

公开(公告)号：US20220190007A1

公开(公告)日：2022-06-16

申请号：US17465217

申请日：2021-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuncheol KIM ,  Kyungho LEE ,  Kazunori KAKEHI ,  Doosik SEOL ,  Kyungduck LEE ,  Taesub JUNG ,  Masato FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate having first and second surfaces, pixel regions arranged in a direction parallel to the first surface, first and second photodiodes isolated from each other in each of the pixel regions, a first device isolation film between the pixel regions, a pair of second device isolation films between the first and second photodiodes and extending from the first device isolation film, a doped layer adjacent to the pair of second device isolation films and extending from the second surface to a predetermined depth and spaced apart from the first surface, the doped layer being isolated from the first device isolation film, and a barrier area between the pair of second device isolation films and having a potential greater than a potential of a portion of the substrate adjacent to the barrier area.