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    IMAGE SENSOR
    2.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230246045A1

    公开(公告)日：2023-08-03

    申请号：US18147092

    申请日：2022-12-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taehan Kim ,  Dongmin Keum ,  Bumsuk Kim ,  Kwanghee Lee ,  Yunki Lee ,  Yeaju Jang

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14645 ,  H01L27/14627

    Abstract: There is provided an image sensor including first to fourth color filter layers arranged on a substrate and first to seventh microlenses arranged on the first to fourth color filter layers. The first microlenses vertically overlap diagonal components of a first submatrix comprised of green-red subpixels. The second and third group of microlenses vertically overlap off-diagonal components of the first submatrix comprised of green-red subpixels. A horizontal area of each of the second group of microlenses is less than a horizontal area of each of the first microlenses and a horizontal area of each of the third group of microlenses is greater than a horizontal area of each of the first microlenses.

    Image sensor
    5.
    发明授权
    Image sensor 有权

    公开(公告)号：US11652125B2

    公开(公告)日：2023-05-16

    申请号：US16997351

    申请日：2020-08-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyungho Lee ,  Bumsuk Kim ,  Eun Sub Shim

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689

    Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface with a pixel region having photoelectric conversion regions, a gate electrode disposed on the pixel region and adjacent to the first surface, a first isolation structure extending from the first surface toward the second surface, the first isolation structure comprising a first pixel isolation pattern enclosing the pixel region, and a first inner isolation pattern spaced apart from the first pixel isolation pattern and positioned between the photoelectric conversion regions, and a second isolation structure extending from the second surface toward the first surface with a top surface vertically spaced apart from at least a portion of a bottom surface of the first isolation structure. The bottom surface of the first isolation structure is closer to the second surface of the semiconductor substrate than to the first surface thereof.

    Image sensor
    6.
    发明授权
    Image sensor 有权

    公开(公告)号：US11297219B2

    公开(公告)日：2022-04-05

    申请号：US16847146

    申请日：2020-04-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bumsuk Kim ,  Kwanhee Lee ,  Yun Ki Lee

    IPC: H04N5/232 ,  H04N5/225 ,  H04N5/378 ,  H04N9/04

    Abstract: An image sensor is disclosed. The image sensor may include pixel groups, which are two-dimensionally arranged on a substrate, and each of the pixel groups including a plurality of pixels. The image sensor may also include a light-blocking pattern, which is disposed on the substrate and between the pixels. The pixel groups may include first image pixel groups sensing a first light, second image pixel groups sensing a second light, and an auto-focus (AF) pixel group detecting a phase. The AF pixel group may include a first AF pixel and a second AF pixel adjacent to each other, and the light-blocking pattern may be absent on the substrate between the first AF pixel and the second AF pixel.

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220406836A1

    公开(公告)日：2022-12-22

    申请号：US17672912

    申请日：2022-02-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taehan Kim ,  Cheonho Park ,  Jaeho Choi ,  Bumsuk Kim ,  Jungsaeng Kim ,  Yunki Lee

    IPC: H01L27/146

    Abstract: An image sensor includes a pixel array including a plurality of pixels arranged in directions, parallel to an upper surface of a substrate, each of the plurality of pixels including at least one photodiode, a color filter above the at least one photodiode, and a pixel circuit below the at least one photodiode, and a logic circuit configured to obtain a pixel signal from the plurality of pixels. The plurality of pixels include red pixels each having a red color filter, green pixels each having a green color filter, and blue pixels each having a blue color filter, and a size of a first red color filter included in a first red pixel, disposed in a first area separated by a first distance from a center of the pixel array, is greater than a size of a second red color filter included in a second red pixel, disposed in a second area separated from the center of the pixel array by a second distance, greater than the first distance.

    Auto-focus image sensor and digital image processing device including the same
    8.
    发明授权
    Auto-focus image sensor and digital image processing device including the same 有权

    公开(公告)号：US11375100B2

    公开(公告)日：2022-06-28

    申请号：US17005423

    申请日：2020-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bumsuk Kim ,  Jungchak Ahn

    IPC: H04N5/232 ,  H01L27/146 ,  H04N9/04 ,  H04N5/369

    Abstract: The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern.

    Auto-focus image sensor and digital image processing device including the same
    9.
    发明授权
    Auto-focus image sensor and digital image processing device including the same 有权

    公开(公告)号：US10979621B2

    公开(公告)日：2021-04-13

    申请号：US16356057

    申请日：2019-03-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bumsuk Kim ,  Jungchak Ahn

    IPC: H04N5/232 ,  H04N5/369 ,  H01L27/146 ,  H04N9/04

    Abstract: The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern.

    Image sensor
    10.
    发明授权
    Image sensor 有权

    公开(公告)号：US12191331B2

    公开(公告)日：2025-01-07

    申请号：US18319101

    申请日：2023-05-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masato Fujita ,  Yunki Lee ,  Eunsub Shim ,  Kyungho Lee ,  Bumsuk Kim ,  Taehan Kim

    IPC: H01L27/146 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

    Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

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