公开(公告)号：US20170358596A1

公开(公告)日：2017-12-14

申请号：US15671370

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JU-MI YUN ,  Young-Jin Noh ,  Kwang-Min Park ,  Jae-Young Ahn ,  Guk-Hyon Yon ,  Dong-Chul Yoo ,  Joong-Yun Ra ,  Young-Seon Son ,  Jeon-Il Lee ,  Hun-Hyeong Lim

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/28 ,  H01L29/51 ,  H01L29/788

CPC classification number: H01L27/11582 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7883

Abstract: A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.

公开(公告)号：US10041170B2

公开(公告)日：2018-08-07

申请号：US15228368

申请日：2016-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheolkyu Yang ,  Young-Jin Noh ,  Chulyoung Jang ,  Joongyun Ra ,  Dong-min Son

IPC: H01L21/02 ,  C23C16/44 ,  H01L27/11582

Abstract: Provided are a dummy wafer, a thin-film forming method, and a method of fabricating a semiconductor device using the same. The dummy wafer includes an insulating substrate with a first surface opposite a second surface, and a plurality of openings formed in the insulating substrate. The plurality of openings penetrate at least a portion of the insulating substrate in a direction from the first surface toward the second surface. The first and second surfaces of the insulating substrate, and an inner surface of each of the plurality of openings, include protrusions.

公开(公告)号：US09991281B2

公开(公告)日：2018-06-05

申请号：US15671370

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Mi Yun ,  Young-Jin Noh ,  Kwang-Min Park ,  Jae-Young Ahn ,  Guk-Hyon Yon ,  Dong-Chul Yoo ,  Joong-Yun Ra ,  Young-Seon Son ,  Jeon-Il Lee ,  Hun-Hyeong Lim

IPC: H01L29/788 ,  H01L27/11582 ,  H01L21/28 ,  H01L29/51 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7883

Abstract: A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.

公开(公告)号：US10020234B2

公开(公告)日：2018-07-10

申请号：US15233643

申请日：2016-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Jin Noh ,  Jung-Sub Lee ,  Sung-Mo Gu

IPC: H01L21/66 ,  H01L27/12

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L27/1259

Abstract: A method for fabricating a substrate includes forming a first substrate including a thin film transistor array, and inspecting a first surface of an inspecting device, wherein inspecting the first surface of the inspection device includes: generating first measurement data by detecting a first measurement light that is parallel to a surface of an inspection region in the first surface, generating second measurement data by detecting a second measurement light that is parallel to the surface of the inspection region, and inspecting a state of a surface of the inspection region by comparing the first measurement data with the second measurement data.

公开(公告)号：US09754959B2

公开(公告)日：2017-09-05

申请号：US14963987

申请日：2015-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Mi Yun ,  Young-Jin Noh ,  Kwang-Min Park ,  Jae-Young Ahn ,  Guk-Hyon Yon ,  Dong-Chul Yoo ,  Joong-Yun Ra ,  Young-Seon Son ,  Jeon-Il Lee ,  Hun-Hyeong Lim

IPC: H01L29/788 ,  H01L27/11582 ,  H01L27/11556 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7883

Abstract: A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.

公开(公告)号：US20170022610A1

公开(公告)日：2017-01-26

申请号：US15066318

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Sung Seo ,  Yong-Kwon Kim ,  Young-Jin Noh ,  Young-Chang Song ,  Jae-Myung Choe ,  Ji-Hoon Choi ,  Sang-Cheol HA

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/24

CPC classification number: C23C16/4412 ,  C23C16/045 ,  C23C16/45502 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4584 ,  H01L28/00

Abstract: A wafer processing apparatus may include a reaction tube extending in a vertical direction and defining a process chamber for receiving a boat that holds a plurality of wafers. A gas injector may be configured to supply a reaction gas into the process chamber and may include a gas distributor extending in the vertical direction in the reaction tube. The gas injector may have a plurality of ejection holes for spraying the reaction gas. An inner diameter of the gas distributor may be at least 10 mm, and a sectional area ratio of the total sectional area of the ejection holes to a sectional area of the gas distributor is about 0.3 or less.

Abstract translation: 晶片处理装置可以包括在垂直方向上延伸的反应管并且限定用于接纳保持多个晶片的船的处理室。 气体注射器可以被配置为将反应气体供应到处理室中，并且可以包括在反应管中沿垂直方向延伸的气体分布器。 气体喷射器可以具有用于喷射反应气体的多个喷射孔。 气体分配器的内径可以为至少10mm，并且喷射孔的总截面积与气体分配器的截面面积的截面积比为约0.3以下。