公开(公告)号：US10041170B2

公开(公告)日：2018-08-07

申请号：US15228368

申请日：2016-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheolkyu Yang ,  Young-Jin Noh ,  Chulyoung Jang ,  Joongyun Ra ,  Dong-min Son

IPC: H01L21/02 ,  C23C16/44 ,  H01L27/11582

Abstract: Provided are a dummy wafer, a thin-film forming method, and a method of fabricating a semiconductor device using the same. The dummy wafer includes an insulating substrate with a first surface opposite a second surface, and a plurality of openings formed in the insulating substrate. The plurality of openings penetrate at least a portion of the insulating substrate in a direction from the first surface toward the second surface. The first and second surfaces of the insulating substrate, and an inner surface of each of the plurality of openings, include protrusions.