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1.发明申请公开(公告)号：US20180047448A1
公开(公告)日：2018-02-15
申请号：US15790257
申请日：2017-10-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SANG-WAN NAM , WON-TAECK JUNG
CPC classification number: G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/3427
Abstract: A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.
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公开(公告)号：US20160358660A1
公开(公告)日：2016-12-08
申请号：US15238740
申请日：2016-08-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SANG-WAN NAM , WON-TAECK JUNG , JUNGHOON PARK
CPC classification number: G11C16/14 , G11C16/0466 , G11C16/0483 , G11C16/08 , G11C16/16 , G11C16/3418 , G11C16/344 , G11C16/3445 , H01L27/115
Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.
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3.发明申请NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, OPERATING METHOD THEREOF 有权非易失性存储器件，具有该存储器件的存储器件，其操作方法公开(公告)号：US20160118123A1
公开(公告)日：2016-04-28
申请号：US14668544
申请日：2015-03-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： WON-TAECK JUNG , TAE-HONG KWON , TAE-MIN PARK , OHSUK KWON
Abstract: An operating method of a nonvolatile memory device includes determining whether a memory block is a selected block, and when the memory block is not the selected block, determining whether the memory block shares a block word line with the selected block. The method further includes applying an unselected block word line voltage to word lines of the memory block when the memory block shares the block word line with the selected block, and floating the word lines of the memory block when the memory block does not share the block word line with the selected block.
Abstract translation: 非易失性存储器件的操作方法包括确定存储器块是否是所选择的块，以及当存储器块不是所选择的块时，确定存储器块是否与所选择的块共享块字线。 该方法还包括当存储器块与所选择的块共享块字线时将未选择的块字线电压施加到存储器块的字线，并且当存储器块不共享块时浮置存储器块的字线 字线与所选块。
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公开(公告)号：US20230253059A1
公开(公告)日：2023-08-10
申请号：US18301377
申请日：2023-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： KYUNG-MIN KANG , DONGKU KANG , SU CHANG JEON , WON-TAECK JUNG
CPC classification number: G11C16/3481 , G11C16/10 , G11C16/30 , G11C16/28 , G11C16/08
Abstract: A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device incudes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.
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公开(公告)号：US20190088341A1
公开(公告)日：2019-03-21
申请号：US15959323
申请日：2018-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： WON-TAECK JUNG , SO-YEONG GWAK , SANG-WAN NAM
CPC classification number: G11C16/26 , G11C16/0483 , G11C16/10 , G11C16/24 , G11C16/34 , G11C16/3459
Abstract: An operation method of a nonvolatile memory device includes applying a program voltage to a selected word line and programming a selected memory cell connected to the selected word line; reading an adjacent memory cell connected to an adjacent word line of the selected word line; and verifying the selected memory cell by adjusting charge sharing between the selected memory cell and a sensing node, which is connected to the selected memory cell through a bit line.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20220068397A1
公开(公告)日：2022-03-03
申请号：US17523385
申请日：2021-11-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： WON-TAECK JUNG , SANG-WAN NAM , JINWOO PARK , JAEYONG JEONG
Abstract: A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.
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公开(公告)号：US20160148698A1
公开(公告)日：2016-05-26
申请号：US15009856
申请日：2016-01-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SANG-WAN NAM , WON-TAECK JUNG , JUNGHOON PARK
CPC classification number: G11C16/14 , G11C16/0466 , G11C16/0483 , G11C16/08 , G11C16/16 , G11C16/3418 , G11C16/344 , G11C16/3445 , H01L27/115
Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.
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公开(公告)号：US20150187425A1
公开(公告)日：2015-07-02
申请号：US14644247
申请日：2015-03-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： SANG-WAN NAM , WON-TAECK JUNG , JUNGHOON PARK
CPC classification number: G11C16/14 , G11C16/0466 , G11C16/0483 , G11C16/08 , G11C16/16 , G11C16/3418 , G11C16/344 , G11C16/3445 , H01L27/115
Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.
Abstract translation: 非易失性存储器的擦除方法包括向衬底提供擦除电压，将选择字线电压提供给与非易失性存储器的存储块内的选定子块相连的字线，将非选择字线电压提供给 在从提供擦除电压的时间点起的第一延迟时间期间，与存储器块内的未选择子块相连的字线，然后浮动与未选择的子块相连的字线。
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公开(公告)号：US20240005992A1
公开(公告)日：2024-01-04
申请号：US18207979
申请日：2023-06-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： DONGJIN SHIN , SANG-WON PARK , WON-TAECK JUNG , BYUNGSOO KIM , SU CHANG JEON
CPC classification number: G11C16/08 , G11C16/24 , G11C16/0433
Abstract: An operation method of a memory device, having a memory block connected with wordlines, includes: (1) receiving a command from a memory controller, (2) activating a first block selection signal controlling first pass transistors configured to connect the wordlines connected with the memory block with driving lines, and (3) controlling the wordlines such that a first operation corresponding to the command is performed. After the first operation is completed, the method further includes: (4) pre-charging channels of the memory block with a first voltage and (5) performing a mode recovery operation such that the wordlines are controlled with a recovery voltage. The mode recovery operation includes deactivating the first block selection signal.
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10.发明申请公开(公告)号：US20180374541A1
公开(公告)日：2018-12-27
申请号：US15911208
申请日：2018-03-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： WON-TAECK JUNG , SANG-WAN NAM , JINWOO PARK , JAEYONG JEONG
CPC classification number: G11C16/20 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/3427 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582
Abstract: A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.
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