公开(公告)号：US08748847B2

公开(公告)日：2014-06-10

申请号：US13723855

申请日：2012-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Rak Sohn ,  Seul Gee Lee ,  Chul Soo Yoon ,  Chang Bun Yoon ,  Min Jung Park ,  Sang Hoon Ahn

IPC: G01N21/64

CPC classification number: H01L22/20 ,  G01J1/0488 ,  G01J3/0251 ,  G01J2001/4252 ,  G01N21/64 ,  H01L22/14 ,  H01L33/005 ,  H01L33/56 ,  H01L2933/0041

Abstract: A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.

Abstract translation: 一种白色发光器件的制造方法，其特征在于，将荧光体片分割为单独的发光二极管（LED）器件的荧光膜单元，测定各荧光膜单元的光转换特性，对荧光体膜的荧光体单元进行分类 根据光转换特性的测量结果将多个组分成多组，并组合分成多组的荧光膜单元和具有预定光特性的LED装置，以获得目标色特性。

公开(公告)号：US20140227806A1

公开(公告)日：2014-08-14

申请号：US14257219

申请日：2014-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONG RAK SOHN ,  Seul Gee Lee ,  Chul Soo Yoon ,  Chang Bun Yoon ,  Min Jung Park ,  Sang Hoon Ahn

IPC: H01L21/66 ,  H01L33/56

CPC classification number: H01L22/20 ,  G01J1/0488 ,  G01J3/0251 ,  G01J2001/4252 ,  G01N21/64 ,  H01L22/14 ,  H01L33/005 ,  H01L33/56 ,  H01L2933/0041

Abstract: A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.

Abstract translation: 一种白色发光器件的制造方法，其特征在于，将荧光体片分割为单独的发光二极管（LED）器件的荧光膜单元，测定各荧光膜单元的光转换特性，对荧光体膜的荧光体单元进行分类 根据光转换特性的测量结果将多个组分成多组，并组合分成多组的荧光膜单元和具有预定光特性的LED装置，以获得目标色特性。

公开(公告)号：US10535600B2

公开(公告)日：2020-01-14

申请号：US15987211

申请日：2018-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoon Seok Seo ,  Jong Min Baek ,  Su Hyun Bark ,  Sang Hoon Ahn ,  Hyeok Sang Oh ,  Eui Bok Lee

IPC: H01L23/52 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L29/41

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a lower wiring, a first interlayer insulating film disposed on the substrate and including a first region and a second region over the first region, an etch stop film on the first interlayer insulating film, a second interlayer insulating film on the etch stop film, a first upper wiring in the second interlayer insulating film, the etch stop film, and the second region of the first interlayer insulating film and the first upper wiring is spaced apart from the lower wiring and a via in the first region of the first interlayer insulating film, and the via connects the lower wiring and the first upper wiring, wherein the first upper wiring includes a first portion in the second interlayer insulating film, and a second portion in the etch stop film and the second region of the first interlayer insulating film, and a sidewall of the second portion of the first upper wiring includes a stepwise shape.

公开(公告)号：US10510658B2

公开(公告)日：2019-12-17

申请号：US16039838

申请日：2018-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui Bok Lee ,  Deok Young Jung ,  Sang Bom Kang ,  Doo-Hwan Park ,  Jong Min Baek ,  Sang Hoon Ahn ,  Hyeok Sang Oh ,  Woo Kyung You

IPC: H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a first insulating film on the substrate, a lower metal layer in the first insulating film, and a second insulating film on the first insulating film. The lower metal layer may be in the second insulating film, the second insulating film may include a lower surface facing the substrate and an upper surface that is opposite the lower surface, and the upper surface of the second insulating film may be upwardly convex. The semiconductor devices may further include a barrier dielectric film including a recess on the second insulating film, and a via metal layer that is in the recess of the barrier dielectric film and electrically connected with the lower metal layer. The first insulating film and the second insulating film may be sequentially stacked on the substrate in a vertical direction, and a longest vertical distance between an upper surface of the lower metal layer and the substrate may be less than a longest vertical distance between the upper surface of the second insulating film and the substrate.

公开(公告)号：US09048172B2

公开(公告)日：2015-06-02

申请号：US14257219

申请日：2014-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Rak Sohn ,  Seul Gee Lee ,  Chul Soo Yoon ,  Chang Bun Yoon ,  Min Jung Park ,  Sang Hoon Ahn

IPC: G01N21/64 ,  H01L21/66 ,  H01L33/00 ,  H01L33/56 ,  G01J1/04 ,  G01J1/42 ,  G01J3/02

CPC classification number: H01L22/20 ,  G01J1/0488 ,  G01J3/0251 ,  G01J2001/4252 ,  G01N21/64 ,  H01L22/14 ,  H01L33/005 ,  H01L33/56 ,  H01L2933/0041

Abstract: A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.

Abstract translation: 一种白色发光器件的制造方法，其特征在于，将荧光体片分割为单独的发光二极管（LED）器件的荧光膜单元，测定各荧光膜单元的光转换特性，对荧光体膜的荧光体单元进行分类 根据光转换特性的测量结果将多个组分成多组，并组合分成多组的荧光膜单元和具有预定光特性的LED装置，以获得目标色特性。

公开(公告)号：US20240413081A1

公开(公告)日：2024-12-12

申请号：US18652067

申请日：2024-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Jung Lee ,  Sang Hoon Ahn ,  Dong Gon Yoo ,  Jeong Won Hwang

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor device includes a via pattern in a first interlayer insulating film, and a wiring pattern that extends in a first direction and is on the first interlayer insulating film and the via pattern. The wiring pattern includes a lower wiring line and an upper wiring line on the lower wiring line, where the lower wiring line and the upper wiring line are stacked in a second direction, where the lower wiring line is between the via pattern and the upper wiring line and is on an upper surface of the via pattern, where a first portion of the lower wiring line is on the upper surface of the via pattern and has a first thickness, and where a second portion of the lower wiring line is on an upper surface of the first interlayer insulating film and has a second thickness.

公开(公告)号：US11978668B2

公开(公告)日：2024-05-07

申请号：US17546470

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ming He ,  Harsono Simka ,  Anthony Dongick Lee ,  Seowoo Nam ,  Sang Hoon Ahn

IPC: H01L21/768 ,  H01L21/3105 ,  H01L21/311 ,  H01L23/532 ,  H01L23/535

CPC classification number: H01L21/76895 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76829 ,  H01L23/53242 ,  H01L23/53257 ,  H01L23/535

Abstract: Integrated circuit devices including a via and methods of forming the same are provided. The methods may include forming a conductive wire structure on a substrate. The conductive wire structure may include a first insulating layer and a conductive wire stack in the first insulating layer, and the conductive wire stack may include a conductive wire and a mask layer stacked on the substrate. The method may also include forming a recess in the first insulating layer by removing the mask layer, the recess exposing the conductive wire, forming an etch stop layer and then a second insulating layer on the first insulating layer and in the recess of the first insulating layer, and forming a conductive via extending through the second insulating layer and the etch stop layer and contacting the conductive wire.

公开(公告)号：US10475739B2

公开(公告)日：2019-11-12

申请号：US15840128

申请日：2017-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Kyung You ,  Eui Bok Lee ,  Jong Min Baek ,  Su Hyun Bark ,  Jang Ho Lee ,  Sang Hoon Ahn ,  Hyeok Sang Oh

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising a lower wire, an etch stop layer on the substrate, an interlayer insulating layer on the etch stop layer, an upper wire disposed in the interlayer insulating layer and separated from the lower wire and a via formed in the interlayer insulating layer and the etch stop layer and connecting the lower wire with the upper wire, wherein the via comprises a first portion in the etch stop layer and a second portion in the interlayer insulating layer, and wherein a sidewall of the first portion of the via increases stepwise.

公开(公告)号：US10461027B2

公开(公告)日：2019-10-29

申请号：US16008319

申请日：2018-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui Bok Lee ,  Jong Min Baek ,  Sang Hoon Ahn ,  Hyeok Sang Oh

IPC: H01L23/58 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

Abstract: A semiconductor device includes a lower insulating layer disposed on a substrate. A conductive pattern is formed in the lower insulating layer. A middle insulating layer is disposed on the lower insulating layer and the conductive pattern. A via control region is formed in the middle insulating layer. An upper insulating layer is disposed on the middle insulating layer and the via control region. A via plug is formed to pass through the via control region and to be connected to the conductive pattern. The via control region has a lower etch rate than the middle insulating layer.

公开(公告)号：US09984921B2

公开(公告)日：2018-05-29

申请号：US15802724

申请日：2017-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hoon Ahn ,  Jong Min Baek ,  Myung Geun Song ,  Woo Kyung You ,  Byung Kwon Cho ,  Byung Hee Kim ,  Na Ein Lee

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/311 ,  H01L21/3205 ,  H01L23/528

CPC classification number: H01L21/7682 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32053 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76883 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53295

Abstract: A method of manufacturing a semiconductor device includes forming grooves in a first dielectric layer on a substrate, the first dielectric layer including a first part between the grooves, forming a first barrier layer and an interconnect layer in each groove, recessing the interconnect layer and the first barrier layer, forming a capping pattern on the recessed interconnect layer, etching at least a portion of the first part by a first etching process, sequentially etching the capping pattern and the at least a portion of the IMD part by a second etching process to form a trench, conformally forming a second barrier layer in the trench and on the recessed interconnection layer, and forming a second dielectric layer on the second barrier layer not to fill the trench such that an air gap is formed in the trench.