公开(公告)号：US10685973B2

公开(公告)日：2020-06-16

申请号：US15942683

申请日：2018-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Kyu Song ,  Ki Yoon Kang ,  Jae Hoon Jang

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11551 ,  H01L23/00

Abstract: A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.

公开(公告)号：US11095876B2

公开(公告)日：2021-08-17

申请号：US16252806

申请日：2019-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Ho Jun ,  Chang Soo Park ,  Moon Kyu Song ,  Kyung Koo Lee ,  Kil Whan Lee ,  Hyuk Jae Jang ,  Kyung Ah Jeong

IPC: H04N19/103 ,  H04N19/46 ,  H04N19/91 ,  G06F13/16 ,  H04N19/186 ,  H04N19/176 ,  H04N19/124 ,  H04N19/12

Abstract: Provided is an image processing device configured to compress first image data. The image processing device includes an encoding circuit configured to compress the first image data into second image data including prediction data and residual data, compress the second image data into third image data by performing entropy encoding on the second image data, generate a header representing a compression ratio of the third image data, and store the third image data along with the header in a memory device as compressed first image data.

公开(公告)号：US12249175B2

公开(公告)日：2025-03-11

申请号：US17569059

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Sol Lee ,  Duck-Soo Kim ,  Kwang Hyuk Bae ,  Yeol Min Seong ,  Moon Kyu Song ,  Seong Wook Song ,  Jun Seo Lee

IPC: G06V40/12 ,  G06V10/46 ,  G06V10/82

Abstract: A fingerprint recognition device is provided. The fingerprint recognition device includes an image acquisition module acquiring a fingerprint image including an input fingerprint, a preprocessing module generating a preprocessed image by preprocessing the fingerprint image, a minutiae extraction module extracting coordinates of each of minutiae and orientation points of the input fingerprint from the preprocessed image and a fake detection module receiving regions-of-interest (ROIs), including the coordinates of each of the minutiae or orientation points of the input fingerprint, and determining whether the input fingerprint is a fake by performing learning using the received ROIs.

公开(公告)号：US11991347B2

公开(公告)日：2024-05-21

申请号：US17377927

申请日：2021-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Ho Jun ,  Chang Soo Park ,  Moon Kyu Song ,  Kyung Koo Lee ,  Kil Whan Lee ,  Hyuk Jae Jang ,  Kyung Ah Jeong

IPC: H04N19/103 ,  G06F13/16 ,  H04N19/12 ,  H04N19/124 ,  H04N19/176 ,  H04N19/186 ,  H04N19/46 ,  H04N19/91

CPC classification number: H04N19/103 ,  G06F13/1668 ,  H04N19/12 ,  H04N19/124 ,  H04N19/176 ,  H04N19/186 ,  H04N19/46 ,  H04N19/91

Abstract: Provided is an image processing device configured to compress first image data. The image processing device includes an encoding circuit configured to compress the first image data into second image data including prediction data and residual data, compress the second image data into third image data by performing entropy encoding on the second image data, generate a header representing a compression ratio of the third image data, and store the third image data along with the header in a memory device as compressed first image data.

公开(公告)号：US11233067B2

公开(公告)日：2022-01-25

申请号：US16898720

申请日：2020-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Kyu Song ,  Ki Yoon Kang ,  Jae Hoon Jang

IPC: H01L27/11582 ,  H01L23/00 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11551

Abstract: A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.