公开(公告)号：US09461132B2

公开(公告)日：2016-10-04

申请号：US14511193

申请日：2014-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keon-Yong Cheon ,  Il-Ryong Kim ,  Dong-Won Kim

IPC: H01L21/70 ,  H01L29/423 ,  H01L29/49 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L29/42372 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/78

Abstract: Provided is a semiconductor device having mid-gap work function metal gate electrodes. The semiconductor device includes a plurality of gate patterns, and the gate patterns have different gate electrode metals from each other or different gate electrode metal thicknesses from each other.

Abstract translation: 提供了具有中间功函数金属栅电极的半导体器件。 半导体器件包括多个栅极图案，并且栅极图案具有彼此不同的栅电极金属或彼此不同的栅电极金属厚度。

公开(公告)号：US08753945B2

公开(公告)日：2014-06-17

申请号：US13687104

申请日：2012-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keon-Yong Cheon ,  Dong-Won Kim ,  Sung-Man Lim ,  Sadaaki Masuoka ,  Yaoqi Dong

IPC: H01L21/336

CPC classification number: H01L29/78 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

Abstract: In a method of forming MOS transistor, a gate structure is formed on a substrate and a first spacer layer is formed on the substrate conformal to the gate structure. A second spacer layer is formed on the first spacer layer. A second spacer is formed on the first spacer layer corresponding to a sidewall of the gate structure by partially removing the second spacer layer from the first spacer layer. Impurities are implanted in the substrate by an ion implantation process using the gate structure including the first spacer layer and the second spacer as an ion implantation mask to form source/drain extension regions at surface portions of the substrate around the gate structure.

Abstract translation: 在形成MOS晶体管的方法中，在衬底上形成栅极结构，并且在与栅极结构一致的衬底上形成第一间隔层。 在第一间隔层上形成第二间隔层。 通过从第一间隔层部分去除第二间隔层，在对应于栅极结构的侧壁的第一间隔层上形成第二间隔物。 通过使用包括第一间隔层和第二间隔物的栅极结构作为离子注入掩模的离子注入工艺将杂质注入到衬底中，以在栅极结构周围的衬底的表面部分处形成源极/漏极延伸区域。