Invention Grant
US09461132B2 Semiconductor device having mid-gap work function metal gate electrode
有权
具有中间功能金属栅电极的半导体器件
- Patent Title: Semiconductor device having mid-gap work function metal gate electrode
- Patent Title (中): 具有中间功能金属栅电极的半导体器件
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Application No.: US14511193Application Date: 2014-10-10
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Publication No.: US09461132B2Publication Date: 2016-10-04
- Inventor: Keon-Yong Cheon , Il-Ryong Kim , Dong-Won Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0029052 20140312
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/423 ; H01L29/49 ; H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L27/088
Abstract:
Provided is a semiconductor device having mid-gap work function metal gate electrodes. The semiconductor device includes a plurality of gate patterns, and the gate patterns have different gate electrode metals from each other or different gate electrode metal thicknesses from each other.
Public/Granted literature
- US20150263004A1 SEMICONDUCTOR DEVICE HAVING MID-GAP WORK FUNCTION METAL GATE ELECTRODE Public/Granted day:2015-09-17
Information query
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