公开(公告)号：US11967630B2

公开(公告)日：2024-04-23

申请号：US17669859

申请日：2022-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung Hoon Lee ,  Wan Don Kim ,  Jong Ho Park ,  Sang Jin Hyun

IPC: H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/511 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

公开(公告)号：US10770560B2

公开(公告)日：2020-09-08

申请号：US16214537

申请日：2018-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong Hyuk Yim ,  Kug Hwan Kim ,  Wan Don Kim ,  Jung Min Park ,  Jong Ho Park ,  Byoung Hoon Lee ,  Yong Ho Ha ,  Sang Jin Hyun ,  Hye Ri Hong

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L27/092 ,  H01L29/78 ,  H01L29/49

Abstract: A semiconductor device according to an example embodiment of the present inventive concept includes a substrate having a first region and a second region horizontally separate from the first region; a first gate line in the first region, the first gate line including a first lower work function layer and a first upper work function layer disposed on the first lower work function layer; and a second gate line including a second lower work function layer in the second region, the second gate line having a width in a first, horizontal direction equal to or narrower than a width of the first gate line in the first direction, wherein an uppermost end of the first upper work function layer and an uppermost end of the second lower work function layer are each located at a vertical level higher than an uppermost end of the first lower work function layer with respect to a second direction perpendicular to the first direction.

公开(公告)号：US09757861B2

公开(公告)日：2017-09-12

申请号：US14679127

申请日：2015-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon Hyuk Hong ,  Gi Oh Kim ,  Jong Ho Park ,  Ji Hyun Park ,  Seung Hyun Baek

IPC: B25J9/16

CPC classification number: B25J9/1689 ,  G05B2219/40161 ,  G05B2219/40165

Abstract: A user interface device of a remote control system for a robot and a method using the same are provided. The user interface device includes: a radio frequency (RF) unit for receiving, from a remote control robot, camera data and at least one sensor data detecting a distance; a display unit having a main screen and at least one auxiliary screen; and a controller having an environment evaluation module for determining whether the received camera data are in a normal condition, and having a screen display mode change module for displaying, if the received camera data are in a normal condition, the camera data on the main screen and displaying, if the received camera data are in an abnormal condition, the sensor data on the main screen.

公开(公告)号：US20220059533A1

公开(公告)日：2022-02-24

申请号：US17219083

申请日：2021-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SU YOUNG BAE ,  Jong Ho Park ,  Dong Soo Lee ,  Wan Don Kim

IPC: H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device includes first and second active patterns disposed on a substrate, a field insulating film disposed between the first and second active patterns, a first gate structure intersecting the first active pattern, and a second gate structure intersecting the second active pattern, in which the first gate structure includes a first gate insulating film on the first active pattern, a first upper insertion film on the first gate insulating film, and a first upper conductive film on the first upper insertion film, and the second gate structure includes a second gate insulating film on the second active pattern, a second upper insertion film on the second gate insulating film, and a second upper conductive film on the second upper insertion film. Each of the first and second upper insertion films may include an aluminum nitride film. Each of the first and second upper conductive films may include aluminum.

公开(公告)号：US11955359B2

公开(公告)日：2024-04-09

申请号：US17200981

申请日：2021-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Young Oh ,  Seung Hwan Kim ,  Jong Ho Park ,  Yong Kwan Lee ,  Jong Ho Lee

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67383 ,  H01L21/6732 ,  H01L21/67346 ,  H01L21/67379 ,  H01L21/02 ,  H01L21/67017

Abstract: The present disclosure provides a magazine supporting equipment for supporting a magazine with multiple input ports. The magazine supporting equipment comprises a contact plate, a first sidewall plate, and a second sidewall plate. The contact plate is in contact with the magazine. The first sidewall plate extends vertically from one end of the contact plate. The second sidewall plate parallel is to the first sidewall plate and extends vertically from one end to the other end of the contact plate. The first sidewall plate extends along at least a part of a first sidewall of the magazine. The second sidewall plate extends along at least a part of a second sidewall of the magazine. The first sidewall plate and the second sidewall plate include control openings through which gas flows in and out.

公开(公告)号：US11160504B2

公开(公告)日：2021-11-02

申请号：US15901322

申请日：2018-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Ho Yun ,  Jong Ho Park ,  Jee Hoon Lee ,  Doo Suk Kang ,  Jeong Min Park

IPC: A61B5/00 ,  G16H40/63 ,  A61B5/0205 ,  A61B5/0531 ,  G06F3/041 ,  A61B5/1455 ,  A61B5/024 ,  A61B5/0533 ,  A61B5/25 ,  A61B5/291 ,  A61B5/296 ,  A61B5/398

Abstract: Disclosed is an electronic device including a plurality of electrodes selectively connectable to a touch sensor or one or more biometric sensors; and a processor configured to receive a user input through the plurality of electrodes in a state in which the touch sensor and the plurality of electrodes are connected; perform an operation relating to the touch sensor when where the user input satisfies a first condition; connect the plurality of electrodes to the one or more biometric sensors when where the user input satisfies a second condition; and obtain a plurality of pieces of biometric information according to a pre-determined sequence through the plurality of electrodes connected with the one or more biometric sensors.

公开(公告)号：US10600913B2

公开(公告)日：2020-03-24

申请号：US16100804

申请日：2018-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Keun Chung ,  Jong Ho Park ,  Seung Ha Oh ,  Sang Yong Kim ,  Hoon Joo Na ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/775 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L21/283 ,  H01L21/324

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.

公开(公告)号：US20230262119A1

公开(公告)日：2023-08-17

申请号：US18056545

申请日：2022-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Ho Park ,  Chang Sub LEE ,  Ji-Heon OH

IPC: H04L67/1095 ,  H04L67/1097

CPC classification number: H04L67/1095 ,  H04L67/1097

Abstract: A media clock recovery device, a method for recovering media clock, and an electronic device are provided. The media clock recovery device comprising processing circuitry configured to determine whether a time stamp is normal, the time stamp being received in a packet through a network, calculate an average time interval of a dummy time stamp, the calculated average time interval of the dummy time stamp being used for generating a media clock in response to determining the time stamp is not normal, generate the dummy time stamp based on the calculated average time interval of the dummy time stamp, wherein the processing circuitry is configured to determine the time stamp is not normal, in response to the packet not being received within a time threshold value from a reception time of a previously received packet.

公开(公告)号：US20230026211A1

公开(公告)日：2023-01-26

申请号：US17814828

申请日：2022-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Ho Park ,  Gyu Ho Kang ,  Seong-Hoon Bae ,  Jeong Gi Jin ,  Ju-Il Choi ,  Atsushi Fujisaki

IPC: H01L23/13 ,  H01L25/16 ,  H01L21/56 ,  H01L23/498 ,  H01L23/31

Abstract: A semiconductor package includes a wiring structure that includes a first insulating layer and a first conductive pattern inside the first insulating layer, a first semiconductor chip disposed on the wiring structure, an interposer that includes a second insulating layer, a second conductive pattern inside the second insulating layer, and a recess that includes a first sidewall formed on a first surface of the interposer that faces the first semiconductor chip and a first bottom surface connected with the first sidewall, where the recess exposes at least a portion of the second insulating layer, a first element bonded to the interposer and that faces the first semiconductor chip inside the recess, and a mold layer that covers the first semiconductor chip and the first element.

公开(公告)号：US12069130B2

公开(公告)日：2024-08-20

申请号：US18056545

申请日：2022-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Ho Park ,  Chang Sub Lee ,  Ji-Heon Oh

IPC: G06F15/16 ,  H04L67/1095 ,  H04L67/1097

CPC classification number: H04L67/1095 ,  H04L67/1097

Abstract: A media clock recovery device, a method for recovering media clock, and an electronic device are provided. The media clock recovery device comprising processing circuitry configured to determine whether a time stamp is normal, the time stamp being received in a packet through a network, calculate an average time interval of a dummy time stamp, the calculated average time interval of the dummy time stamp being used for generating a media clock in response to determining the time stamp is not normal, generate the dummy time stamp based on the calculated average time interval of the dummy time stamp, wherein the processing circuitry is configured to determine the time stamp is not normal, in response to the packet not being received within a time threshold value from a reception time of a previously received packet.