公开(公告)号：US12142587B2

公开(公告)日：2024-11-12

申请号：US18448066

申请日：2023-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinho Park ,  Chin Kim ,  Yongseung Bang ,  Jiyeon Baek ,  Jeong Hoon Ahn

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.

公开(公告)号：US20230395541A1

公开(公告)日：2023-12-07

申请号：US18448066

申请日：2023-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinho Park ,  Chin Kim ,  Yongseung Bang ,  Jiyeon Baek ,  Jeong Hoon Ahn

IPC: H01L23/00 ,  H01L23/522

CPC classification number: H01L24/05 ,  H01L24/13 ,  H01L23/53238 ,  H01L23/5226 ,  H01L2224/05686 ,  H01L24/03

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.

公开(公告)号：US11804459B2

公开(公告)日：2023-10-31

申请号：US17009975

申请日：2020-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinho Park ,  Chin Kim ,  Yongseung Bang ,  Jiyeon Baek ,  Jeong Hoon Ahn

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L24/05 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/13 ,  H01L23/53238 ,  H01L2224/05018 ,  H01L2224/05025 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05561 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05686 ,  H01L2224/13026

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.

公开(公告)号：US11114524B2

公开(公告)日：2021-09-07

申请号：US16439947

申请日：2019-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shaofeng Ding ,  Jinho Park ,  Yongseung Bang ,  Jeong Hoon Ahn

IPC: H01L23/522 ,  H01L21/768 ,  H01L49/02 ,  H01L23/528 ,  H01L21/033 ,  H01L21/311 ,  H01L23/532

Abstract: A semiconductor device including a first electrode on a substrate, a second electrode on the first electrode, a first dielectric layer between the first electrode and the second electrode; a third electrode on the second electrode, a second dielectric layer between the second electrode and the third electrode, and a first contact plug penetrating the third electrode and contacting the first electrode, the first contact plug contacts a top surface of the third electrode and a side surface of the third electrode.

公开(公告)号：US09070748B2

公开(公告)日：2015-06-30

申请号：US14108771

申请日：2013-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pil-Kyu Kang ,  Taeyeong Kim ,  Byung Lyul Park ,  Jumyong Park ,  Jinho Park ,  Kyu-Ha Lee ,  Deok-Young Jung ,  Gilheyun Choi

IPC: H01L21/768

CPC classification number: H01L25/0657 ,  G11C8/00 ,  G11C16/08 ,  H01L21/6835 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/02372 ,  H01L2224/03002 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13169 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

Abstract translation: 提供半导体器件的导电通孔，其沿垂直方向穿过衬底延伸，导电通孔的第一端延伸穿过衬底的第一表面，使得第一端相对于衬底的第一表面在垂直方向上突出 底物。 绝缘层设置在导电通孔的第一端和基板的第一表面上。 除去掩模层图案的上部，使得在导电通孔的第一端上的绝缘层的封盖部分露出。 去除绝缘层的与导电通孔相隔一定距离的一部分，以在绝缘层中形成凹陷。 同时去除导电通孔第一端上的绝缘层的封盖部分。

公开(公告)号：US11043456B2

公开(公告)日：2021-06-22

申请号：US16660124

申请日：2019-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho Park ,  Shaofeng Ding ,  Yongseung Bang ,  Jeong Hoon Ahn

IPC: H01L23/535 ,  H01L27/108

Abstract: A semiconductor device includes a substrate, a first electrode including a first hole, a first dielectric layer on an upper surface of the first electrode and on an inner surface of the first hole, a second electrode on the first dielectric layer, a second dielectric layer on the second electrode, a third electrode on the second dielectric layer and including a second hole, and a first contact plug extending through the second electrode and the second dielectric layer and extending through the first hole and the second hole. A sidewall of the first contact plug is isolated from direct contact with the sidewall of the first hole and a sidewall of the second hole, and has a step portion located adjacent to an upper surface of the second electrode.

公开(公告)号：US11791267B2

公开(公告)日：2023-10-17

申请号：US17340584

申请日：2021-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho Park ,  Shaofeng Ding ,  Yongseung Bang ,  Jeong Hoon Ahn

IPC: H01L23/522 ,  H01L23/535 ,  H10B12/00

CPC classification number: H01L23/535 ,  H10B12/00

Abstract: A semiconductor device includes a substrate, a first electrode including a first hole, a first dielectric layer on an upper surface of the first electrode and on an inner surface of the first hole, a second electrode on the first dielectric layer, a second dielectric layer on the second electrode, a third electrode on the second dielectric layer and including a second hole, and a first contact plug extending through the second electrode and the second dielectric layer and extending through the first hole and the second hole. A sidewall of the first contact plug is isolated from direct contact with the sidewall of the first hole and a sidewall of the second hole, and has a step portion located adjacent to an upper surface of the second electrode.

公开(公告)号：US11056094B2

公开(公告)日：2021-07-06

申请号：US16503990

申请日：2019-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho Park ,  Guiwon Seo ,  Jonghwa Lee ,  Hyeongcheol Jeong ,  Sungwon Cho

IPC: G10K11/178

Abstract: A method and audio apparatus for processing an audio signal are provided. The audio apparatus includes at least one microphone to acquire ambient sound of the audio apparatus, a speaker to output the audio signal, an air pressure regulator including a fluid tube connecting an external space of a housing of the audio apparatus to an internal space of the housing, and configured to adjust a change in an air pressure of the internal space of the housing and an audio signal processor configured to generate an anti-noise signal for canceling noise in the ambient sound by using the acquired ambient sound and output the generated anti-noise signal and the audio signal through the speaker.