公开(公告)号：US11804459B2

公开(公告)日：2023-10-31

申请号：US17009975

申请日：2020-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinho Park ,  Chin Kim ,  Yongseung Bang ,  Jiyeon Baek ,  Jeong Hoon Ahn

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L24/05 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/13 ,  H01L23/53238 ,  H01L2224/05018 ,  H01L2224/05025 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05561 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05686 ,  H01L2224/13026

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.

公开(公告)号：US12142587B2

公开(公告)日：2024-11-12

申请号：US18448066

申请日：2023-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinho Park ,  Chin Kim ,  Yongseung Bang ,  Jiyeon Baek ,  Jeong Hoon Ahn

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.

公开(公告)号：US20230395541A1

公开(公告)日：2023-12-07

申请号：US18448066

申请日：2023-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinho Park ,  Chin Kim ,  Yongseung Bang ,  Jiyeon Baek ,  Jeong Hoon Ahn

IPC: H01L23/00 ,  H01L23/522

CPC classification number: H01L24/05 ,  H01L24/13 ,  H01L23/53238 ,  H01L23/5226 ,  H01L2224/05686 ,  H01L24/03

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a first dielectric layer including a first pad, a second dielectric layer on the first dielectric layer, a through electrode that penetrates the second dielectric layer and is electrically connected to the first pad, an upper passivation layer on the second dielectric layer, a second pad on the upper passivation layer, and an upper barrier layer between the upper passivation layer and the second pad. The first pad and the through electrode include a first material. The second pad includes a second material that is different from the first material of the first pad and the through electrode. The second pad includes a first part on the upper passivation layer, and a second part that extends from the first part into the upper passivation layer and is connected to the through electrode.