公开(公告)号：US20250116056A1

公开(公告)日：2025-04-10

申请号：US18889538

申请日：2024-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changnyeun KIM ,  Sungho YOON ,  Jeongyun LEE ,  Yeajin CHO ,  Hwangmook CHO

IPC: D06F43/08 ,  D06F43/02 ,  F17C7/02

Abstract: A washing machine including a washing tub to wash laundry carbon dioxide; first and second storage tanks to store carbon dioxide; a first flow path connecting a compressor and the first storage tank; a second flow path connecting the compressor and the second storage tank; a first valve to open and close the first flow path; a second valve to open and close the second flow path; and a controller configured to, upon completion of a laundry washing operation, operate the compressor to compress carbon dioxide received from the washing tub, open the first valve to move the compressed carbon dioxide from the compressor along the first flow path to the first storage tank, and, based on pressure in the washing tub, close the first valve and open the second valve to move the compressed carbon dioxide from the compressor along the second flow path to the second storage tank.

公开(公告)号：US20250116055A1

公开(公告)日：2025-04-10

申请号：US18918472

申请日：2024-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyun LEE ,  Changnyeun KIM ,  Yeajin CHO ,  Hwangmook CHO

IPC: D06F43/08

Abstract: A washing machine may include a washing tub configured to wash laundry with carbon dioxide; a compressor configured to compress the carbon dioxide discharged from the washing tub; a first storage tank connected to the compressor and configured to store carbon dioxide; a second storage tank connected to the compressor and configured to store carbon dioxide; a distillation tank to accommodate carbon dioxide and foreign matter discharged from the washing tub and to evaporate the carbon dioxide so that the foreign matter and the carbon dioxide evaporated in the distillation tank are separated; and a first pressure relief valve on a first discharge flow path between the washing tub and the second storage tank, and configured to open in response to pressure in the washing tub being greater than or equal to a first pressure so that carbon dioxide in the washing tub is moved to the second storage tank.

公开(公告)号：US20250116054A1

公开(公告)日：2025-04-10

申请号：US18830038

申请日：2024-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwangmook CHO ,  Changnyeun KIM ,  Sungho YOON ,  Jeongyun LEE ,  Hongkwon CHUN

IPC: D06F43/02 ,  D06F43/08

Abstract: A washing machine may include a storage tank to store carbon dioxide; a tub to wash laundry using the carbon dioxide; a distillation tub to separate carbon dioxide discharged from the tub and foreign substances contained in the carbon dioxide; a compressor to compress the carbon dioxide discharged from the tub and move the carbon dioxide to the storage tank; a rotatable drum inside the tub; a driving device to drive rotation of a rotatable shaft connected to the rotatable drum to rotate the rotatable drum; a pipe configured to pass inside of the tub to exchange heat of the compressed carbon dioxide with the tub; and a blade protruding from the rotatable shaft so that the blade is rotated by rotation of the rotatable shaft to circulate air inside the tub to spread the heat of the compressed carbon dioxide emitted from the pipe.

公开(公告)号：US20170148914A1

公开(公告)日：2017-05-25

申请号：US15348586

申请日：2016-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongseok LEE ,  Jeongyun LEE ,  Gigwan PARK ,  Keo Myoung SHIN ,  Hyunji KIM ,  Sangduk PARK

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7843 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0924 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7848

Abstract: A semiconductor device includes an active pattern having sidewalls defined by a device isolation pattern disposed on a substrate and an upper portion protruding from a top surface of the device isolation pattern, a liner insulating layer on the sidewalls of the active pattern, a gate structure on the active pattern, and source/drain regions at both sides of the gate structure. The liner insulating layer includes a first liner insulating layer and a second liner insulating layer having a top surface higher than a top surface of the first liner insulating layer. Each of the source/drain regions includes a first portion defined by the second liner insulating layer, and a second portion protruding upward from the second liner insulating layer and covering the top surface of the first liner insulating layer.

公开(公告)号：US20220102493A1

公开(公告)日：2022-03-31

申请号：US17324610

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon PARK ,  Jongchul PARK ,  Bokyoung LEE ,  Jeongyun LEE ,  Hyunggoo LEE ,  Yeondo JUNG ,  Haegeon JUNG

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch.. The first distance may be about 0.8 times to about 1.2 times the first pitch.

公开(公告)号：US20210217749A1

公开(公告)日：2021-07-15

申请号：US16888209

申请日：2020-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyun LEE ,  Sungwoo KANG ,  Jongchul PARK ,  Youngmook OH ,  Jeongyun LEE

IPC: H01L27/088 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device according to some embodiments of the disclosure may include a fin type active pattern extending in a first direction, a plurality of gate structures on the fin type active pattern and extending in a second direction different from the first direction, a plurality of inter-contact insulation patterns on respective ones of the plurality of gate structures, a plurality of interlayer insulation layers on side surfaces of the plurality of gate structures, and a plurality of contact plugs respectively between pairs of the plurality of gate structures. The fin type active pattern may include a plurality of source/drains. Lower ends of the plurality of contact plugs may contact the plurality of source/drains. The plurality of gate structures may each include a first gate metal, a second gate metal, a gate capping layer, a gate insulation layer, a first spacer, and a second spacer.