公开(公告)号：US20220189970A1

公开(公告)日：2022-06-16

申请号：US17392377

申请日：2021-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haegeon JUNG ,  Taeyong KWON ,  Kwang-Yong YANG ,  Youngmook OH ,  Bokyoung LEE ,  Seung Mo HA ,  Hyunggoo LEE

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first memory cell and a second memory cell, the first and second memory cells being adjacent to each other in a first direction, first to fourth memory fins adjacent to each other in the first direction in the first memory cell, the first to fourth memory fins protruding from the substrate, fifth to eighth memory fins adjacent to each other in the first direction in the second memory cell, the fifth to eighth memory fins protruding from the substrate, and a first shallow device isolation layer between the fourth memory fin and the fifth memory fin, a sidewall of the first shallow device isolation layer having an inflection point.

公开(公告)号：US20220102493A1

公开(公告)日：2022-03-31

申请号：US17324610

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongsoon PARK ,  Jongchul PARK ,  Bokyoung LEE ,  Jeongyun LEE ,  Hyunggoo LEE ,  Yeondo JUNG ,  Haegeon JUNG

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch.. The first distance may be about 0.8 times to about 1.2 times the first pitch.