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    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140061725A1

    公开(公告)日：2014-03-06

    申请号：US13754047

    申请日：2013-01-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ki-yeol PARK ,  Woo-chul JEON ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jong-bong HA ,  Sun-kyu HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

    Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

    Abstract translation: 根据示例实施例，较高电子迁移率晶体管（HEMT）可以包括第一沟道层，第一沟道层上的第二沟道层，第二沟道层上的沟道电源，与第一沟道层间隔开的漏极， 与第一沟道层接触并与第二沟道层和沟道供给层中的至少一个接触的源电极以及源电极和漏电极之间的栅电极单元。 栅电极单元可以具有常关结构。 第一和第二沟道层彼此形成PN结。 漏电极接触第二沟道层和沟道供应层中的至少一个。

    SPIN FIELD EFFECT LOGIC DEVICES
    3.
    发明申请
    SPIN FIELD EFFECT LOGIC DEVICES 有权
    旋转场效应逻辑器件

    公开(公告)号：US20130277722A1

    公开(公告)日：2013-10-24

    申请号：US13915272

    申请日：2013-06-11

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Ki-ha HONG ,  Jong-seob KIM ,  Jai-kwang SHIN

    IPC: H01L29/66

    CPC classification number: H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F10/1936 ,  H01F10/3254

    Abstract: Provided are spin field effect logic devices, the logic devices including: a gate electrode; a channel formed of a magnetic material above the gate electrode to selectively transmit spin-polarized electrons; a source on the channel; and a drain and an output electrode on the channel outputting electrons transmitted from the source. The gate electrode may control a magnetization state of the channel in order to selectively transmit the electrons injected from the source to the channel.

    Abstract translation: 提供的是自旋场效应逻辑器件，逻辑器件包括：栅电极; 由栅电极上方的磁性材料形成的沟道，以选择性地透射自旋极化电子; 频道上的来源; 以及沟道上的漏极和输出电极，输出从源极发射的电子。 栅电极可以控制通道的磁化状态，以选择性地将从源引入的电子传输到通道。

    POWER MODULE INCLUDING LEAKAGE CURRENT PROTECTION CIRCUIT
    4.
    发明申请
    POWER MODULE INCLUDING LEAKAGE CURRENT PROTECTION CIRCUIT 有权
    电源模块，包括泄漏电流保护电路

    公开(公告)号：US20130241604A1

    公开(公告)日：2013-09-19

    申请号：US13737217

    申请日：2013-01-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ho-jung KIM ,  Jai-kwang SHIN ,  U-in CHUNG ,  Hyun-sik CHOI

    IPC: H02H9/02 ,  H03K17/56

    CPC classification number: H02H9/02 ,  H01L2924/0002 ,  H03K17/165 ,  H03K17/56 ,  H03K2217/0036 ,  H01L2924/00

    Abstract: A power module including a power device and a periphery circuit configured to suppress a leakage current in the power device. The periphery circuit includes a leakage current detection circuit configured to detect a leakage current from the power device and control operation of the power device based on a result of the detection. The leakage current detection circuit including an input terminal connected to the power device, a plurality of NMOS transistors, a plurality of PMOS transistors connected to the plurality of NMOS transistors, and a comparator.

    Abstract translation: 一种功率模块，包括功率器件和外围电路，被配置为抑制功率器件中的漏电流。 周边电路包括漏电流检测电路，其被配置为基于检测结果检测来自功率器件的漏电流和功率器件的控制操作。 泄漏电流检测电路包括连接到功率器件的输入端子，多个NMOS晶体管，连接到多个NMOS晶体管的多个PMOS晶体管和比较器。

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF DRIVING THE SAME
    5.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF DRIVING THE SAME 有权
    高电子移动性晶体管及其驱动方法

    公开(公告)号：US20140103969A1

    公开(公告)日：2014-04-17

    申请号：US13868579

    申请日：2013-04-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jae-joon OH ,  Jong-bong HA ,  Jai-kwang SHIN

    IPC: H01L29/778 ,  H03K3/012

    CPC classification number: H01L29/7781 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7782 ,  H01L29/7786 ,  H03K3/012

    Abstract: According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other.

    Abstract translation: 根据示例性实施例，HEMT包括沟道层，沟道层上的沟道供应层，在沟道层上隔开的源电极和漏电极，沟道供应层上的耗尽形成层，以及多个 在源电极和漏电极之间的耗尽形成层上的栅电极。 通道供给层被配置为在通道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为在2DEG中形成耗尽区。 多个栅电极包括彼此间隔开的第一栅电极和第二栅电极。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20140097448A1

    公开(公告)日：2014-04-10

    申请号：US13868490

    申请日：2013-04-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woong-je SUNG ,  Chang-yong UM ,  Jai-kwang SHIN

    IPC: H01L27/088 ,  H01L21/8232 ,  H01L21/82

    CPC classification number: H01L27/088 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/8213 ,  H01L21/8232 ,  H01L29/7827

    Abstract: A semiconductor device includes a drift layer including a trench formed on a semiconductor substrate. A well in the drift layer overlaps an edge of the trench, and at least one gate electrode is formed at this overlapping edge region. The drift layer and semiconductor may be doped with a first type of impurity and the well may be doped with a second type of impurity. Through this arrangement, an improved distribution of carriers may be formed in the drift layer.

    Abstract translation: 半导体器件包括漂移层，其包括在半导体衬底上形成的沟槽。 漂移层中的阱与沟槽的边缘重叠，并且在该重叠边缘区域形成至少一个栅电极。 漂移层和半导体可以掺杂第一类型的杂质，并且阱可以掺杂第二类型的杂质。 通过这种布置，可以在漂移层中形成改进的载流子分布。

    POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    电源开关装置及其制造方法

    公开(公告)号：US20140091312A1

    公开(公告)日：2014-04-03

    申请号：US13927230

    申请日：2013-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joon OH

    IPC: H01L29/20 ,  H01L29/66

    CPC classification number: H01L29/2003 ,  H01L29/205 ,  H01L29/66204 ,  H01L29/66325 ,  H01L29/861

    Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.

    Abstract translation: 功率开关器件包括在包括二维电子气体（2DEG）的衬底上的沟道形成层和在沟道形成层处对应于2DEG的沟道供应层。 阴极耦合到沟道供应层的第一端，并且阳极耦合到沟道供应层的第二端。 沟道形成层还包括以图案排列的多个耗尽区，并且多个耗尽区之间的沟道形成层的部分是非耗尽区。

    NITRIDE-BASED SEMICONDUCTOR DEVICE
    9.
    发明申请
    NITRIDE-BASED SEMICONDUCTOR DEVICE 有权
    基于氮化物的半导体器件

    公开(公告)号：US20140021514A1

    公开(公告)日：2014-01-23

    申请号：US13926553

    申请日：2013-06-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH

    IPC: H01L27/06

    CPC classification number: H01L27/0629 ,  H01L21/8252 ,  H01L27/0605

    Abstract: A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.

    Abstract translation: 氮化物系半导体二极管包括衬底，设置在衬底上的第一半导体层以及设置在第一半导体层上的第二半导体层。 第一和第二半导体层包括氮化物基半导体。 第二半导体层的第一部分可以具有比第二半导体层的第二部分薄的厚度。 二极管还可以包括设置在第二半导体层上的绝缘层，覆盖第二半导体层的第一部分并与第一半导体层和第二半导体层形成欧姆接触的第一电极，以及与第二半导体层分开的第二电极 第一电极，第二电极与第一半导体层和第二半导体层形成欧姆接触。

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20130234207A1

    公开(公告)日：2013-09-12

    申请号：US13714957

    申请日：2012-12-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

    Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括：包括缓冲层的堆叠，包含二维电子气体（2DEG）通道的沟道层和相互堆叠的沟道供应层，所述堆叠限定 第一孔和彼此间隔开的第二孔。 第一电极，第二电极和第三电极沿着沟道供应层的第一表面彼此间隔开。 第一焊盘在缓冲层上并且延伸穿过堆叠的第一孔至第一电极。 第二焊盘位于缓冲层上并且延伸穿过堆叠的第二孔至第二电极。 第三焊盘在堆叠下方并电连接到第三电极。

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