公开(公告)号：US10128112B2

公开(公告)日：2018-11-13

申请号：US15595945

申请日：2017-05-16

申请人： Samsung Electronics Co., Ltd.

发明人： Cho Eun Lee ,  Jin Bum Kim ,  Kang Hun Moon ,  Jae Myung Choe ,  Sun Jung Kim ,  Dong Suk Shin ,  Il Gyou Shin ,  Jeong Ho Yoo

IPC分类号： H01L21/336 ,  H01L21/02 ,  H01L21/223 ,  H01L29/66

摘要： A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.

公开(公告)号：US11735663B2

公开(公告)日：2023-08-22

申请号：US17565650

申请日：2021-12-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Bum Kim ,  Gyeom Kim ,  Da Hye Kim ,  Jae Mun Kim ,  Il Gyou Shin ,  Seung Hun Lee ,  Kyung In Choi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/7849 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

摘要： Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US11233150B2

公开(公告)日：2022-01-25

申请号：US16910819

申请日：2020-06-24

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Bum Kim ,  Gyeom Kim ,  Da Hye Kim ,  Jae Mun Kim ,  Il Gyou Shin ,  Seung Hun Lee ,  Kyung In Choi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

摘要： Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.