APPARATUS AND METHOD FOR DESIGNING AND MANUFACTURING SHOWERHEAD

    公开(公告)号:US20190228120A1

    公开(公告)日:2019-07-25

    申请号:US16127692

    申请日:2018-09-11

    Abstract: An apparatus for generating 3D shape data of a showerhead includes: a data processor that generates data sets comprising information indicating values of a first distance between an upper surface of a wafer and a showerhead, information indicating positions on the wafer and information about a fluid flow physical quantity value and determines a function representing a relationship among the various information; an input unit that receives condition data comprising a target fluid flow physical quantity value for each of the positions; and a database that stores information about the function. The data processor obtains information about a second distance, which has the target fluid flow physical quantity value, between the upper surface of the wafer and the showerhead at each of the positions, extracts spatial coordinate information of a lower surface of the showerhead, and generates 3D shape data of the showerhead using the spatial coordinate information.

    Plasma treatment apparatus and method of fabricating semiconductor device using the same

    公开(公告)号:US10790168B2

    公开(公告)日:2020-09-29

    申请号:US15972350

    申请日:2018-05-07

    Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.

    Apparatus and method for designing and manufacturing showerhead

    公开(公告)号:US11182518B2

    公开(公告)日:2021-11-23

    申请号:US16127692

    申请日:2018-09-11

    Abstract: An apparatus for generating 3D shape data of a showerhead includes: a data processor that generates data sets comprising information indicating values of a first distance between an upper surface of a wafer and a showerhead, information indicating positions on the wafer and information about a fluid flow physical quantity value and determines a function representing a relationship among the various information; an input unit that receives condition data comprising a target fluid flow physical quantity value for each of the positions; and a database that stores information about the function. The data processor obtains information about a second distance, which has the target fluid flow physical quantity value, between the upper surface of the wafer and the showerhead at each of the positions, extracts spatial coordinate information of a lower surface of the showerhead, and generates 3D shape data of the showerhead using the spatial coordinate information.

    Method of fabricating semiconductor device

    公开(公告)号:US10128112B2

    公开(公告)日:2018-11-13

    申请号:US15595945

    申请日:2017-05-16

    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.

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