公开(公告)号：US10658249B2

公开(公告)日：2020-05-19

申请号：US16170842

申请日：2018-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

公开(公告)号：US11735663B2

公开(公告)日：2023-08-22

申请号：US17565650

申请日：2021-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum Kim ,  Gyeom Kim ,  Da Hye Kim ,  Jae Mun Kim ,  Il Gyou Shin ,  Seung Hun Lee ,  Kyung In Choi

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7849 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US11233150B2

公开(公告)日：2022-01-25

申请号：US16910819

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum Kim ,  Gyeom Kim ,  Da Hye Kim ,  Jae Mun Kim ,  Il Gyou Shin ,  Seung Hun Lee ,  Kyung In Choi

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US11069820B2

公开(公告)日：2021-07-20

申请号：US16848228

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.