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公开(公告)号:US10658249B2
公开(公告)日:2020-05-19
申请号:US16170842
申请日:2018-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gun Ho Jo , Dae Joung Kim , Jae Mun Kim , Moon Han Park , Tae Ho Cha , Jae Jong Han
IPC: H01L21/8238 , H01L29/66 , H01L21/02 , H01L29/786 , H01L29/78 , H01L29/423 , H01L21/84 , H01L21/8234
Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.
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公开(公告)号:US11735663B2
公开(公告)日:2023-08-22
申请号:US17565650
申请日:2021-12-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin Bum Kim , Gyeom Kim , Da Hye Kim , Jae Mun Kim , Il Gyou Shin , Seung Hun Lee , Kyung In Choi
IPC: H01L29/78 , H01L29/06 , H01L29/423 , H01L29/786 , H01L29/66 , H01L21/02
CPC classification number: H01L29/7849 , H01L21/02236 , H01L21/02532 , H01L21/02603 , H01L29/0673 , H01L29/42392 , H01L29/66742 , H01L29/66795 , H01L29/785 , H01L29/78696
Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.
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公开(公告)号:US11233150B2
公开(公告)日:2022-01-25
申请号:US16910819
申请日:2020-06-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin Bum Kim , Gyeom Kim , Da Hye Kim , Jae Mun Kim , Il Gyou Shin , Seung Hun Lee , Kyung In Choi
IPC: H01L29/78 , H01L29/06 , H01L29/423 , H01L29/786 , H01L29/66 , H01L21/02
Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.
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公开(公告)号:US11069820B2
公开(公告)日:2021-07-20
申请号:US16848228
申请日:2020-04-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gun Ho Jo , Dae Joung Kim , Jae Mun Kim , Moon Han Park , Tae Ho Cha , Jae Jong Han
IPC: H01L29/786 , H01L29/78 , H01L29/423 , H01L29/66 , H01L21/02 , H01L21/8238 , H01L21/84 , H01L21/8234
Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.
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