公开(公告)号：US20160064277A1

公开(公告)日：2016-03-03

申请号：US14674332

申请日：2015-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun PARK ,  Dong-Hyun Im ,  Soon-Gun Lee ,  Jong-Myeong Lee ,  Han-Jin Lim

IPC: H01L21/768 ,  H01L49/02

CPC classification number: H01L21/76837 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76844 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76889 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10855 ,  H01L28/91 ,  H01L29/413 ,  H01L2221/1094

Abstract: Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.

Abstract translation: 制造半导体器件的方法可以包括形成引导图案，其暴露基底图案，通过执行第一纳米线生长工艺在基底图案上形成第一纳米线，在第一纳米线之间形成第一模制绝缘层， 去除纳米线，并在孔中形成包括导电材料的第一电极。

公开(公告)号：US20230352548A1

公开(公告)日：2023-11-02

申请号：US18219525

申请日：2023-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae CHO ,  Dongjin LEE ,  Ji Eun LEE ,  Kyoung-Ho JUNG ,  Dong Su KO ,  Yongsu KIM ,  Jiho YOO ,  Sung HEO ,  Hyun PARK ,  Satoru YAMADA ,  Moonyoung JEONG ,  Sungjin KIM ,  Gyeongsu PARK ,  Han Jin LIM

IPC: H01L29/49 ,  H01L21/28 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20180130665A1

公开(公告)日：2018-05-10

申请号：US15679315

申请日：2017-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun PARK ,  Naein LEE

IPC: H01L21/285 ,  H01L27/11582 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/32 ,  H01L21/311 ,  H01L27/108

CPC classification number: H01L21/28562 ,  H01L21/28061 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32051 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/11582 ,  H01L29/40117 ,  H01L29/66545

Abstract: A method of fabricating a semiconductor device, the method including forming a deposition active layer and a guide pattern on a semiconductor substrate such that the guide pattern delimits an exposed surface of the deposition active layer; and selectively depositing a metal-containing layer on the exposed surface of the deposition active layer exposed by the guide pattern, wherein the deposition active layer is a nonmetal layer.

公开(公告)号：US20150235959A1

公开(公告)日：2015-08-20

申请号：US14625282

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Hyeonjin SHIN ,  Seongjun PARK ,  Donghyun IM ,  Hyun PARK ,  Keunwook SHIN ,  Jongmyeong LEE ,  Hanjin LIM

IPC: H01L23/532 ,  H01L27/108

CPC classification number: H01L23/53276 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

Abstract translation: 示例性实施例涉及布线结构，其形成方法和使用该布线结构的电子设备。 布线结构包括与金属层直接接触的第一导电材料层上的第一导电材料层和纳米晶体石墨烯层。

公开(公告)号：US20160260813A1

公开(公告)日：2016-09-08

申请号：US14854272

申请日：2015-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae CHO ,  Dongjin LEE ,  Ji Eun LEE ,  Kyoung-Ho JUNG ,  Dong Su KO ,  Yongsu KIM ,  Jiho YOO ,  Sung HEO ,  Hyun PARK ,  Satoru YAMADA ,  Moonyoung JEONG ,  Sungjin KIM ,  Gyeongsu PARK ,  Han Jin LIM

IPC: H01L29/423 ,  H01L29/51 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括包括沟槽的衬底。 半导体器件还包括设置在沟槽中的栅极电极和设置在衬底和栅电极之间的栅极绝缘膜。 栅电极包括栅极导体和金属元件，并且栅电极的有效功函数小于栅极导体的有效功函数。

公开(公告)号：US20150065881A1

公开(公告)日：2015-03-05

申请号：US14473201

申请日：2014-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SAMSUNG MEDISON CO., LTD.

Inventor： Jeong CHO ,  Hyun PARK

IPC: A61B8/00 ,  A61B8/14

CPC classification number: A61B8/54 ,  A61B8/14 ,  A61B8/429 ,  A61B8/4444 ,  A61B8/4455 ,  A61B8/4472 ,  A61B8/467 ,  A61B8/56

Abstract: An ultrasound diagnostic apparatus includes a communicator configured to receive a signal from an ultrasound probe including a plurality of sensors, and a controller configured to acquire a plurality of data sets corresponding to sensing results of the plurality of sensors from the signal, and perform a predetermined operation corresponding to a combination of the plurality of data sets.

Abstract translation: 超声波诊断装置包括：通信器，被配置为从包括多个传感器的超声波探头接收信号;以及控制器，被配置为从所述信号中获取与所述多个传感器的感测结果对应的多个数据集，并且执行预定的 对应于多个数据组的组合的操作。