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    Semiconductor devices
    2.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US10978486B2

    公开(公告)日：2021-04-13

    申请号：US16295198

    申请日：2019-03-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho-Jun Kim ,  Jaehyeoung Ma ,  Geumjong Bae

    IPC: H01L27/118 ,  H01L21/8238

    Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12183737B2

    公开(公告)日：2024-12-31

    申请号：US18433753

    申请日：2024-02-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho-Jun Kim ,  Hyungjin Park

    IPC: H01L27/085 ,  H01L21/8234 ,  H01L27/088

    Abstract: A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.

    Semiconductor devices
    4.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US11978739B2

    公开(公告)日：2024-05-07

    申请号：US17199497

    申请日：2021-03-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho-Jun Kim ,  Jaehyeoung Ma ,  Geumjong Bae

    IPC: H01L27/118 ,  H01L29/423

    CPC classification number: H01L27/11807 ,  H01L29/42392 ,  H01L2027/11829

    Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10128346B2

    公开(公告)日：2018-11-13

    申请号：US15165145

    申请日：2016-05-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ho-Jun Kim ,  Sung-Dae Suk

    IPC: H01L29/423 ,  H01L29/51 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06

    Abstract: A semiconductor device includes a semiconductor pattern on a substrate along a first direction, a blocking pattern on a top surface of the semiconductor pattern, a first wire pattern on the blocking pattern along a second direction different from the first direction, the first wire including a first part and a second part on opposite sides of the first part, a gate electrode surrounding the first part of the first wire pattern, and a contact surrounding the second part of the first wire pattern, wherein a height of a bottom surface of the contact from a top surface of the substrate is different from a height of a bottom surface of the gate electrode from the top surface of the substrate.

    Method for Manufacturing a Semiconductor Device
    6.
    发明公开
    Method for Manufacturing a Semiconductor Device 审中-公开

    公开(公告)号：US20240204047A1

    公开(公告)日：2024-06-20

    申请号：US18594124

    申请日：2024-03-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ho-Jun Kim ,  Woong Sik NAM ,  Mirco CANTORO

    IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

    CPC classification number: H01L29/0673 ,  H01L21/823481 ,  H01L29/4236 ,  H01L29/6656

    Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11894369B2

    公开(公告)日：2024-02-06

    申请号：US17570979

    申请日：2022-01-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ho-Jun Kim ,  Hyungjin Park

    IPC: H01L27/085 ,  H01L27/088 ,  H01L21/8234

    CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481

    Abstract: A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11569349B2

    公开(公告)日：2023-01-31

    申请号：US17333080

    申请日：2021-05-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ho-Jun Kim ,  Woong Sik Nam ,  Mirco Cantoro

    IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8234

    Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

    SEMICONDUCTOR DEVICES
    10.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200035705A1

    公开(公告)日：2020-01-30

    申请号：US16295198

    申请日：2019-03-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ho-Jun Kim ,  Jaehyeoung Ma ,  Geumjong Bae

    IPC: H01L27/118 ,  H01L21/8238

    Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.

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