公开(公告)号：US09450122B2

公开(公告)日：2016-09-20

申请号：US14711420

申请日：2015-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Ahn ,  Yongwoo Jeon ,  Jungwoo Kim ,  Haeseok Park ,  Seungeon Ahn ,  Seunghyup Lee ,  Myounghoon Jung ,  Hyuksoon Choi

IPC: H01L31/102 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/0336 ,  H01L27/14601 ,  H01L27/14643 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Abstract translation: 示例性实施例涉及包括衬底，形成在衬底上的绝缘掩模层和与绝缘掩模层的表面接触的第一类型半导体层，有源层和第二类型半导体层的横向型光电二极管， 依次设置在与绝缘掩模层的表面基本平行的方向上。 绝缘掩模层包括通孔，并且通过使用横向过度生长法从通孔顺序地形成第一类型半导体层，有源层和第二类型半导体层。

公开(公告)号：US20230215818A1

公开(公告)日：2023-07-06

申请号：US18067839

申请日：2022-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chulsoon Chang ,  Seilyn Kwak ,  Haeseok Park

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/58

CPC classification number: H01L23/562 ,  H01L24/48 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L23/585 ,  H01L2224/48227 ,  H01L2224/32225 ,  H01L2224/73265

Abstract: An integrated circuit device includes a semiconductor substrate having a first device region, a second device region, and a scribe line region therein. The scribe line region, which extends between the first and second device regions, includes a first edge region adjacent the first device region, a second edge region adjacent the second device region and a cutting region extending between the first and second device regions. A lower interlayer insulating layer is provided on the first and second device regions and on the scribe line region. A first multi-level guard ring is provided, which at least partially surrounds the first device region, when viewed from a plan perspective. An insulating structure is provided, which has a recess therein. The recess extends adjacent the first multi-level guard rings and exposes an upper surface of the lower interlayer insulating layer.

公开(公告)号：US11705379B2

公开(公告)日：2023-07-18

申请号：US17087879

申请日：2020-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho Lee ,  Won Kim ,  Haeseok Park ,  Ilgeun Jung ,  Jinkuk Bae ,  Inyoung Lee ,  Sungdong Cho

IPC: H01L23/31 ,  H01L25/065 ,  H01L25/18 ,  H01L21/66 ,  H01L23/00

CPC classification number: H01L23/3171 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/18 ,  H01L22/12 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/13016 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/13564 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/14515 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/1436

Abstract: A semiconductor package may include a base, a first chip on the base, and first connection patterns that connect and couple the base and the first chip. The first chip may include a substrate, pad patterns on the substrate, a passivation layer on the substrate and having openings, and pillars on the substrate, the pad patterns include a first signal pad and a second signal pad, the first connection patterns are in contact with the pillars, the pillars include a first signal pillar in contact with the first signal pad and a second signal pillar in contact with the second signal pad, the openings in the passivation layer include a first opening having a sidewall facing a side surface of the first signal pillar and surrounding the side surface of the first signal pillar, and a second opening having a sidewall facing a side surface of the second signal pillar and surrounding the side surface of the second signal pillar, and a maximum width of the second opening is greater than a maximum width of the first opening.

公开(公告)号：US09429475B2

公开(公告)日：2016-08-30

申请号：US14786572

申请日：2014-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungue Hong ,  Sunghyun Nam ,  Sookyoung Roh ,  Haeseok Park ,  Seokho Yun

IPC: G01J5/08 ,  G01J5/00 ,  G01J5/44

CPC classification number: G01J5/00 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0837 ,  G01J5/0853 ,  G01J5/44 ,  G01J2005/0077

Abstract: A thermal radiation sensor may include a thermal absorption layer, an optical resonator surrounding the thermal absorption layer, and a plasmonic absorber provided on the thermal absorption layer, and thus, the thermal radiation sensor may have high sensitivity and may be miniaturized.

Abstract translation: 热辐射传感器可以包括热吸收层，围绕热吸收层的光学谐振器和设置在热吸收层上的等离子体吸收体，因此热辐射传感器可以具有高灵敏度并且可以小型化。