公开(公告)号：US20230215818A1

公开(公告)日：2023-07-06

申请号：US18067839

申请日：2022-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chulsoon Chang ,  Seilyn Kwak ,  Haeseok Park

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/58

CPC classification number: H01L23/562 ,  H01L24/48 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L23/585 ,  H01L2224/48227 ,  H01L2224/32225 ,  H01L2224/73265

Abstract: An integrated circuit device includes a semiconductor substrate having a first device region, a second device region, and a scribe line region therein. The scribe line region, which extends between the first and second device regions, includes a first edge region adjacent the first device region, a second edge region adjacent the second device region and a cutting region extending between the first and second device regions. A lower interlayer insulating layer is provided on the first and second device regions and on the scribe line region. A first multi-level guard ring is provided, which at least partially surrounds the first device region, when viewed from a plan perspective. An insulating structure is provided, which has a recess therein. The recess extends adjacent the first multi-level guard rings and exposes an upper surface of the lower interlayer insulating layer.