公开(公告)号：US20230299139A1

公开(公告)日：2023-09-21

申请号：US18057986

申请日：2022-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Hwi CHO ,  Myung Gil KANG ,  Gibum KIM ,  Dongwon KIM

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L29/66545 ,  H01L29/66439

Abstract: A semiconductor device includes an active region on a substrate, source/drain patterns on the active region, channel patterns on the active region and connected to the source/drain patterns, each of the channel patterns including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, gate electrodes, which are respectively on the channel patterns and are extended in a first direction and parallel to each other, and active contacts, which are electrically and respectively connected to the source/drain patterns. A bottom surface of a first active contact is located at a first level, and a bottom surface of a second active contact is located at a second level higher than the first level. A bottom surface of a third active contact is located at a third level higher than the second level.

公开(公告)号：US20210242370A1

公开(公告)日：2021-08-05

申请号：US17032332

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun LEE ,  Gibum KIM ,  Joosung KIM ,  Jonguk SEO

IPC: H01L33/24 ,  H01L25/16 ,  H01L33/16 ,  H01L33/00

Abstract: A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.

公开(公告)号：US20240267900A1

公开(公告)日：2024-08-08

申请号：US18434705

申请日：2024-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gibum KIM ,  Kwonjong LEE ,  Sangwon JUNG

IPC: H04W72/0453 ,  G01S7/00 ,  H04W72/11

CPC classification number: H04W72/0453 ,  G01S7/006 ,  H04W72/11

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate than 4G communication systems such as LTE systems. A method by a base station in a wireless communication system may comprise transmitting, to a user equipment (UE), sensing configuration information for a sensing operation; transmitting a first sensing signal for the sensing operation based on the sensing configuration information; and receiving a second sensing signal reflected from a target based on the sensing configuration information and obtaining sensing data based on the second sensing signal, wherein the sensing configuration information includes resource allocation information for the sensing operation.

公开(公告)号：US20240243824A1

公开(公告)日：2024-07-18

申请号：US18170896

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwonjong LEE ,  Gibum KIM ,  Sundo KIM ,  Donghun LEE ,  Sangwon JUNG ,  Jungsoo JUNG

IPC: H04B17/345 ,  H04W24/10 ,  H04W52/52

CPC classification number: H04B17/345 ,  H04W24/10 ,  H04W52/52

Abstract: The disclosure relates to a 5th-generation (5G) or 6th-generation (6G) communication system for supporting a higher data transmission rate. A method performed by a first user equipment (UE) in a wireless communication system in which cross-link interference (CLI) exists is provided. The method includes receiving, from a base station, control information related to automatic gain control (AGC) tuning and CLI measurement, receiving, from a second UE, a first signal for the AGC tuning based on the control information, controlling an input signal level of an analog-to-digital converter (ADC) in the first UE based on the first signal, receiving, from the second UE, a second signal for the CLI measurement based on the control information, and transmitting, to the base station, a report message including a CLI measurement result measured based on the second signal.

公开(公告)号：US20240363493A1

公开(公告)日：2024-10-31

申请号：US18524812

申请日：2023-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duckseoung KANG ,  Sangdeok KWON ,  Gibum KIM

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include a semiconductor substrate, a channel pattern on a first surface of the semiconductor substrate, source/drain patterns on the first surface of the semiconductor substrate and on both sides of the channel pattern, a contact electrode electrically connected to the source/drain patterns, a lower wiring structure on the second surface of the semiconductor substrate, and a through via penetrating the semiconductor substrate and connecting the contact electrode and the lower wiring structure to each other. The lower wiring structure may include a first metal line connected to a first voltage, a second metal line connected to a second voltage, and an auxiliary electrode electrically connected to one of the first metal line and the second metal line. The auxiliary electrode may overlap and be insulated from an other of the first metal line and the second metal line.

公开(公告)号：US20210159378A1

公开(公告)日：2021-05-27

申请号：US17036090

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun LEE ,  Gibum KIM ,  Joosung KIM ,  Juhyun KIM ,  Tan SAKONG ,  Jonguk SEO ,  Youngjo TAK

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/54 ,  H01L33/48

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.

公开(公告)号：US20250056897A1

公开(公告)日：2025-02-13

申请号：US18794027

申请日：2024-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duckseoung KANG ,  Sangdeok KWON ,  Gibum KIM ,  Seungjae LEE

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L29/861

Abstract: An integrated circuit device includes: a substrate including a first surface and a second surface that is opposite to the first surface; and a diode structure including: an upper semiconductor layer disposed on the first surface of the substrate and including a first dopant of a first conductivity type; a lower semiconductor layer disposed on the second surface of the substrate and including a second dopant of a second conductivity type that is different from the first conductivity type; and a first well region provided in a portion of the substrate that is between the upper semiconductor layer and the lower semiconductor layer, wherein the first well region is in contact with the upper semiconductor layer or the lower semiconductor layer.

公开(公告)号：US20240387624A1

公开(公告)日：2024-11-21

申请号：US18532576

申请日：2023-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duckseoung KANG ,  Sangdeok KWON ,  Gibum KIM

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: An integrated circuit device includes a substrate including a first surface and a second surface that are opposite to each other, a fin type active area extending from the first surface of the substrate in a first direction, a channel structure on an upper surface of the fin type active area and including a channel region, a source/drain region on the upper surface of the fin type active area, a gate line extending on the substrate in a second direction that is perpendicular to the first direction, disposed on the substrate, and surrounding the channel structure, and an isolation structure passing vertically through the substrate and the fin type active area and located at one side of the source/drain region, wherein the channel structure, the source/drain region, and the isolation structure are sequentially arranged in the first direction.