公开(公告)号：US09240239B2

公开(公告)日：2016-01-19

申请号：US14610584

申请日：2015-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/08 ,  H01L27/115

CPC classification number: G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

公开(公告)号：USRE46887E1

公开(公告)日：2018-06-05

申请号：US14805938

申请日：2015-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  H01L29/792 ,  H01L27/11582 ,  H01L29/788 ,  H01L27/11556

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

Abstract: Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.