Invention Grant
- Patent Title: Nonvolatile memory devices and driving methods thereof
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Application No.: US14610584Application Date: 2015-01-30
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Publication No.: US09240239B2Publication Date: 2016-01-19
- Inventor: Kyung-Hwa Kang , Sang-Wan Nam , Donghyuk Chae , ChiWeon Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0011608 20110209
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/08 ; H01L27/115
Abstract:
Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.
Public/Granted literature
- US20150138890A1 NONVOLATILE MEMORY DEVICES AND DRIVING METHODS THEREOF Public/Granted day:2015-05-21
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