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    MEMORY SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME
    1.
    发明申请
    MEMORY SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME 审中-公开
    存储器半导体器件及其操作方法

    公开(公告)号：US20140133223A1

    公开(公告)日：2014-05-15

    申请号：US14159369

    申请日：2014-01-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Byungkyu Cho ,  Changyun Lee ,  Sunghoi Hur

    IPC: G11C16/34

    CPC classification number: G11C16/3427 ,  G11C16/0483 ,  G11C16/26

    Abstract: In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.

    Abstract translation: 在半导体存储器件的读取步骤或程序（写入）验证步骤中，彼此不同的读取电压被施加到分别设置在所选字线的两侧上的一对字线，以抑制程序分配的扩大。

    Nonvolatile memory device
    4.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号：US08923058B2

    公开(公告)日：2014-12-30

    申请号：US13653798

    申请日：2012-10-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changyun Lee ,  Yoocheol Shin ,  Jungdal Choi

    IPC: G11C16/04 ,  G11C5/06 ,  G11C5/02 ,  G11C5/04 ,  G11C11/34

    CPC classification number: G11C11/34 ,  G11C5/02 ,  G11C5/025 ,  G11C5/06 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418

    Abstract: A nonvolatile memory device is provided. The device may include a plurality of cell strings that are configured to share a bit line, word lines, and selection lines. Each of the cell strings may include a plurality of memory cells connected in series to each other and a string selection device controlling connections between the memory cells and the bit line, and the string selection device may include a first string selection element with a first threshold voltage and a second string selection element connected in series to the first string selection element and having a second threshold voltage different from the first threshold voltage. At least one of the first and second string selection elements may include a plurality of switching elements connected in series to each other.

    Abstract translation: 提供非易失性存储器件。 该设备可以包括被配置为共享位线，字线和选择线的多个单元串。 每个单元串可以包括彼此串联连接的多个存储器单元和用于控制存储器单元和位线之间的连接的串选择装置，并且串选择装置可以包括具有第一阈值的第一串选择元件 电压和第二串选择元件串联连接到第一串选择元件并且具有不同于第一阈值电压的第二阈值电压。 第一和第二串选择元件中的至少一个可以包括彼此串联连接的多个开关元件。

    Plasma generator
    5.
    发明授权
    Plasma generator 有权

    公开(公告)号：US12016109B2

    公开(公告)日：2024-06-18

    申请号：US17748152

    申请日：2022-05-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changyun Lee ,  Myoungsoo Kim ,  Sangchul Han ,  Daeman Seo

    IPC: H05H1/46

    CPC classification number: H05H1/466

    Abstract: A plasma generator includes a coaxial tube assembly, a radio frequency (RF) electrode, and a feed including an inner circumferential surface that defines a first and second recesses at opposite, first and second ends of the feed. A first protrusion of the coaxial tube assembly is coupled to the first recess of the feed. A second protrusion of the coaxial tube assembly is coupled to the second recess of the feed. The feed includes first and second inner surfaces that define first and second insertion grooves in the inner circumferential surface at the first and second ends of the feed, respectively. First and second coil springs are at least partially within the first and second insertion grooves, respectively. The coaxial tube assembly, the RF electrode, and the feed provide an RF power transmission path based on the feed being coupled between the coaxial tube assembly and the RF electrode.

    Plasma control device and plasma processing system
    6.
    发明授权
    Plasma control device and plasma processing system 有权

    公开(公告)号：US11984297B2

    公开(公告)日：2024-05-14

    申请号：US17711181

    申请日：2022-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sejin Oh ,  Youngdo Kim ,  Sanghun Kim ,  Sungyeol Kim ,  Younghwan Kim ,  Taemin Earmme ,  Changyun Lee ,  Sunghun Jang

    IPC: H01J37/32 ,  H01L21/311

    CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J37/32568 ,  H01L21/31116 ,  H01J2237/334

    Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

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