Invention Grant
- Patent Title: Memory semiconductor device and method of operating the same
- Patent Title (中): 存储器半导体器件及其操作方法
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Application No.: US14159369Application Date: 2014-01-20
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Publication No.: US09064597B2Publication Date: 2015-06-23
- Inventor: Byungkyu Cho , Changyun Lee , Sunghoi Hur
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0048194 20100524
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C16/26
Abstract:
In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.
Public/Granted literature
- US20140133223A1 MEMORY SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2014-05-15
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