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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09391186B2

    公开(公告)日：2016-07-12

    申请号：US14458288

    申请日：2014-08-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon Lee ,  Chan Ho Park

    IPC: H01L29/778 ,  H01L29/04 ,  H01L29/267 ,  H01L29/66 ,  H01L29/10 ,  H01L29/20

    CPC classification number: H01L29/7787 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462

    Abstract: A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions separately disposed on an upper surface of the first semiconductor layer and having a second band gap wider than the first band gap; and a third semiconductor layer disposed between the first and second regions of the second semiconductor layer, extending up to at least a portion of the first semiconductor layer. The third semiconductor layer may have a channel region doped with an impurity.

    Abstract translation: 半导体器件可以包括：具有第一带隙的第一半导体层; 第二半导体层，包括分别设置在第一半导体层的上表面上并具有比第一带隙宽的第二带隙的第一和第二区域; 以及第三半导体层，设置在所述第二半导体层的所述第一和第二区之间，延伸到所述第一半导体层的至少一部分。 第三半导体层可以具有掺杂有杂质的沟道区。

    Semiconductor devices and method of manufacturing the same
    3.
    发明授权
    Semiconductor devices and method of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号：US08981468B2

    公开(公告)日：2015-03-17

    申请号：US13943208

    申请日：2013-07-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-hyung Nam ,  Yong Kwan Kim ,  Chan Ho Park ,  Pulunsol Cho

    IPC: H01L29/78 ,  H01L29/66 ,  H01L45/00 ,  H01L27/22

    CPC classification number: H01L29/7831 ,  H01L27/228 ,  H01L27/2454 ,  H01L29/66484 ,  H01L45/06 ,  H01L45/085 ,  H01L45/144 ,  H01L45/145

    Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes active portions defined in a semiconductor substrate, a device isolation pattern in a trench formed between the active portions, a gate electrode in a gate recess region crossing the active portions and the device isolation pattern, a gate dielectric layer between the gate electrode and an inner surface of the gate recess region, and a first ohmic pattern and a second ohmic pattern on each of the active portions at both sides of the gate electrode, respectively. The first and second ohmic patterns include a metal-semiconductor compound, and a top surface of the device isolation pattern at both sides of the gate recess region is recessed to be lower than a level of a top surface of the semiconductor substrate.

    Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括限定在半导体衬底中的有源部分，在有源部分之间形成的沟槽中的器件隔离图案，与有源部分交叉的栅极凹部区域中的栅极电极和器件隔离图案，栅极电介质层 电极和栅极凹陷区域的内表面，以及分别在栅电极两侧的每个有源部分上的第一欧姆图案和第二欧姆图案。 第一和第二欧姆模式包括金属半导体化合物，并且栅极凹部区域的两侧的器件隔离图案的顶表面凹陷以低于半导体衬底的顶表面的电平。

    Semiconductor devices using auxiliary layers for trimming margin and devices so formed
    4.
    发明授权
    Semiconductor devices using auxiliary layers for trimming margin and devices so formed 有权

    公开(公告)号：US10312105B2

    公开(公告)日：2019-06-04

    申请号：US15598861

    申请日：2017-05-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chan-Sic Yoon ,  Jiung Pak ,  Kiseok Lee ,  Chan Ho Park ,  Hyeonok Jung

    IPC: H01L21/308 ,  H01L27/108

    Abstract: A method of fabricating a semiconductor device includes forming a linear preliminary mask pattern in a first direction on a substrate. The preliminary mask pattern is patterned to provide a plurality of mask patterns that are aligned end-to-end with one another on the substrate and are separated by an exposed portion of the substrate between respective facing ends of the plurality of mask patterns. An auxiliary layer is formed to cover at least sidewalls of the facing ends to reduce a size of the exposed portion to provide a reduced exposed portion of the substrate and the reduced exposed portion of the substrate is etched to form a trench defining active patterns in the substrate aligned end-to-end with one another.

    APPARATUS AND METHOD FOR PROCESSING VOICE COMMUNICATION IN MOBILE TERMINAL
    6.
    发明申请
    APPARATUS AND METHOD FOR PROCESSING VOICE COMMUNICATION IN MOBILE TERMINAL 审中-公开
    移动终端处理语音通信的装置和方法

    公开(公告)号：US20150087360A1

    公开(公告)日：2015-03-26

    申请号：US14557180

    申请日：2014-12-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chan Ho Park ,  Jae Hun Jeong ,  Hyoung Ju Lee ,  Sung Chel Hwang

    IPC: H04M1/60

    CPC classification number: H04M1/6041 ,  H04M1/6025

    Abstract: A device and method process voice communication service. A mobile terminal device of the present disclosure includes a microphone arranged at one end of a body of the device; a speaker arranged close to the microphone; a transceiver arranged at the other end of the body; a codec including a coder connected to the microphone, a decoder connected to the speaker, and a switch of which one node is connected to one of the coder and the decoder selectively and the other node is connected to the transceiver; and a communication controller which controls the switch to establish a path between the coder and the transceiver and enables the speaker in speakerphone mode.

    Abstract translation: 一种设备和方法处理语音通信服务。 本公开的移动终端装置包括布置在设备的主体的一端的麦克风; 靠近麦克风布置的扬声器; 布置在身体另一端的收发器; 编解码器，包括连接到麦克风的编码器，连接到扬声器的解码器，以及一个节点选择性地连接到编码器和解码器之一的开关，另一个节点连接到收发器; 以及通信控制器，其控制开关以在编码器和收发器之间建立路径，并使扬声器处于扬声器模式。

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