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    Nitride based semiconductor device and manufacturing method thereof
    1.
    发明授权
    Nitride based semiconductor device and manufacturing method thereof 有权
    氮化物基半导体器件及其制造方法

    公开(公告)号：US09209253B2

    公开(公告)日：2015-12-08

    申请号：US13728157

    申请日：2012-12-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon Lee ,  Ki Se Kim

    IPC: H01L29/15 ,  H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/872 ,  H01L29/06

    CPC classification number: H01L29/2003 ,  H01L21/02107 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0649 ,  H01L29/66212 ,  H01L29/872

    Abstract: A nitride based semiconductor device includes a first metallic junction layer, a Schottky junction layer on the first metallic junction layer, a first group III nitride semiconductor layer on the Schottky junction layer, a first insulating pattern layer on the first group III nitride semiconductor layer, the first insulating layer pattern including curved protrusions, a second group III nitride semiconductor layer laterally grown on the first group III nitride semiconductor layer, a first type group III nitride semiconductor layer on the second group III nitride semiconductor layer, the first type group III nitride semiconductor layer being simultaneously doped with aluminum (Al) and silicon (Si), an ohmic junction layer formed on the first type group III nitride semiconductor layer, a second metallic junction layer on the ohmic junction layer, and a metallic supporting substrate on the second metallic junction layer.

    Abstract translation: 氮化物基半导体器件包括第一金属结层，第一金属结层上的肖特基结层，肖特基结层上的第一III族氮化物半导体层，第一III族氮化物半导体层上的第一绝缘图案层， 第一绝缘层图案包括弯曲突起，在第一III族氮化物半导体层上横向生长的第二III族氮化物半导体层，第二III族氮化物半导体层上的第一类型III族氮化物半导体层，第一类型III族氮化物 半导体层同时掺杂有铝（Al）和硅（Si），形成在第一类型III族氮化物半导体层上的欧姆结层，欧姆结层上的第二金属结层和第二金属支撑衬底 金属结层。

    Analog-to-digital converter and method of performing analog-to-digital conversion
    3.
    发明授权
    Analog-to-digital converter and method of performing analog-to-digital conversion 有权

    公开(公告)号：US11018685B2

    公开(公告)日：2021-05-25

    申请号：US15931729

    申请日：2020-05-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Jin Jang ,  Yong Lim ,  Seung Hyun Oh ,  Jae Hoon Lee

    IPC: H03M1/38 ,  H03M1/46 ,  H03K5/24 ,  H03M1/00 ,  H03M1/12 ,  H03M1/06 ,  H03M1/10

    Abstract: An analog-to-digital converter includes a comparator configured to compare an input signal with a reference signal and to output a comparison signal indicating a corresponding comparison result, a control logic configured to output a control signal for adjusting the reference signal based on the comparison signal, and a reference signal adjusting circuit configured to adjust the reference signal based on the control signal. The comparator includes a first pre-amplifier configured to amplify a difference between the input signal and the reference signal using a first transistor having a first size, a second pre-amplifier configured to amplify the difference between the input signal and the reference signal using a second transistor having a second size different from the first size, and a latch configured to generate the comparison signal using at least one of an output of the first and second pre-amplifiers. The first and second pre-amplifiers share the latch.

    Semiconductor device and operating method of semiconductor device
    4.
    发明授权
    Semiconductor device and operating method of semiconductor device 有权

    公开(公告)号：US10312959B2

    公开(公告)日：2019-06-04

    申请号：US15453577

    申请日：2017-03-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong Woo Lee ,  Jae Hoon Lee ,  Jong Mi Lee ,  Thomas Byung Hak Cho

    IPC: H04B1/401 ,  H04B1/00 ,  H04W88/06

    Abstract: Provided are a semiconductor device and an operating method thereof.The semiconductor device includes a mode controller configured to output a first control signal in a first communication mode, and output a second control signal in a second communication mode which is different from the first communication mode; and a configurable circuit configured to generate a first output signal to be transmitted to a first type analog-to-digital converter (ADC) in the first communication mode, and generate a second output signal using a second type ADC in the second communication mode, wherein the configurable circuit comprises a switching circuit configured to change a circuit configuration to a first circuit configuration for generating a first output signal in the first communication mode or to a second circuit configuration for generating a second output signal in the second communication mode, depending on the first control signal or the second control signal received from the mode controller.

    Semiconductor device and method for fabricating the same
    5.
    发明授权
    Semiconductor device and method for fabricating the same 有权

    公开(公告)号：US10026825B2

    公开(公告)日：2018-07-17

    申请号：US15373556

    申请日：2016-12-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon Lee

    IPC: H01L29/66 ,  H01L29/778 ,  H01L29/267 ,  H01L29/10 ,  H01L29/423 ,  H01L29/20

    Abstract: A semiconductor may include a semiconductor substrate including a first region and a second region disposed at opposite sides of the first region, a first trench formed in the first region, a buffer layer filling a portion of the first trench, a first semiconductor layer formed on the buffer layer, a second semiconductor layer forming a hetero-junction with the first semiconductor layer on the first semiconductor layer of the first region and a gate electrode formed on the second semiconductor layer of the first region.

    NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    基于氮化物的异质半导体器件及其制造方法

    公开(公告)号：US20130200388A1

    公开(公告)日：2013-08-08

    申请号：US13759923

    申请日：2013-02-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon Lee ,  Jae Hyun Jeong

    IPC: H01L29/205

    CPC classification number: H01L29/205 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/872

    Abstract: A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area.

    Abstract translation: 氮化物基异质结半导体器件包括设置在衬底上的氮化镓（GaN）层，设置在GaN层上的铝（Al）掺杂的GaN层，设置在Al掺杂GaN层上的第一区域中的肖特基电极， 设置在Al掺杂GaN层上的第二区域中的AlGaN层和设置在AlGaN层上的欧姆电极。 第一个区域与第二个区域不同。

    ANALOG-TO-DIGITAL CONVERTER AND METHOD OF PERFORMING ANALOG-TO-DIGITAL CONVERSION
    8.
    发明申请
    ANALOG-TO-DIGITAL CONVERTER AND METHOD OF PERFORMING ANALOG-TO-DIGITAL CONVERSION 有权

    公开(公告)号：US20210091782A1

    公开(公告)日：2021-03-25

    申请号：US15931729

    申请日：2020-05-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Jin Jang ,  Yong Lim ,  Seung Hyun Oh ,  Jae Hoon Lee

    IPC: H03M1/46 ,  H03K5/24

    Abstract: An analog-to-digital converter includes a comparator configured to compare an input signal with a reference signal and to output a comparison signal indicating a corresponding comparison result, a control logic configured to output a control signal for adjusting the reference signal based on the comparison signal, and a reference signal adjusting circuit configured to adjust the reference signal based on the control signal. The comparator includes a first pre-amplifier configured to amplify a difference between the input signal and the reference signal using a first transistor having a first size, a second pre-amplifier configured to amplify the difference between the input signal and the reference signal using a second transistor having a second size different from the first size, and a latch configured to generate the comparison signal using at least one of an output of the first and second pre-amplifiers. The first and second pre-amplifiers share the latch.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09391186B2

    公开(公告)日：2016-07-12

    申请号：US14458288

    申请日：2014-08-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon Lee ,  Chan Ho Park

    IPC: H01L29/778 ,  H01L29/04 ,  H01L29/267 ,  H01L29/66 ,  H01L29/10 ,  H01L29/20

    CPC classification number: H01L29/7787 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462

    Abstract: A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions separately disposed on an upper surface of the first semiconductor layer and having a second band gap wider than the first band gap; and a third semiconductor layer disposed between the first and second regions of the second semiconductor layer, extending up to at least a portion of the first semiconductor layer. The third semiconductor layer may have a channel region doped with an impurity.

    Abstract translation: 半导体器件可以包括：具有第一带隙的第一半导体层; 第二半导体层，包括分别设置在第一半导体层的上表面上并具有比第一带隙宽的第二带隙的第一和第二区域; 以及第三半导体层，设置在所述第二半导体层的所述第一和第二区之间，延伸到所述第一半导体层的至少一部分。 第三半导体层可以具有掺杂有杂质的沟道区。

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