公开(公告)号：US11482523B2

公开(公告)日：2022-10-25

申请号：US16661576

申请日：2019-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Ki Jung ,  Jae Hun Jeong ,  Chan Geun Ahn ,  Yoon Seok Lee ,  Soo Hun Hong

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device includes a first fin type pattern in a first region of a substrate. The first fin type pattern includes a plurality of spaced-apart fins having respective sidewalls defined by a first trench. A first gate structure is provided, which intersects the first fin type pattern. A second fin type pattern is provided in a second region of a substrate. The second fin type pattern includes a fin having a sidewall defined by a second trench. A second gate structure is provided, which intersects the second fin type pattern. A field insulating film fills at least a part of the first trench and at least a part of the second trench. The field insulating film has a first upper surface, which is in contact with at least one sidewall of the first fin type pattern and is spaced from a bottom of the first trench by a first height, and a second upper surface, which in contact with the sidewall of the second fin type pattern and is spaced from a bottom of the second trench by a second height different from the first height.

公开(公告)号：US20200212035A1

公开(公告)日：2020-07-02

申请号：US16661576

申请日：2019-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Ki Jung ,  Jae Hun Jeong ,  Chan Geun Ahn ,  Yoon Seok Lee ,  Soo Hun Hong

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L21/8234

Abstract: A semiconductor device includes a first fin type pattern in a first region of a substrate. The first fin type pattern includes a plurality of spaced-apart fins having respective sidewalls defined by a first trench. A first gate structure is provided, which intersects the first fin type pattern. A second fin type pattern is provided in a second region of a substrate. The second fin type pattern includes a fin having a sidewall defined by a second trench. A second gate structure is provided, which intersects the second fin type pattern. A field insulating film fills at least a part of the first trench and at least a part of the second trench. The field insulating film has a first upper surface, which is in contact with at least one sidewall of the first fin type pattern and is spaced from a bottom of the first trench by a first height, and a second upper surface, which in contact with the sidewall of the second fin type pattern and is spaced from a bottom of the second trench by a second height different from the first height.

公开(公告)号：US20150087360A1

公开(公告)日：2015-03-26

申请号：US14557180

申请日：2014-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Ho Park ,  Jae Hun Jeong ,  Hyoung Ju Lee ,  Sung Chel Hwang

IPC: H04M1/60

CPC classification number: H04M1/6041 ,  H04M1/6025

Abstract: A device and method process voice communication service. A mobile terminal device of the present disclosure includes a microphone arranged at one end of a body of the device; a speaker arranged close to the microphone; a transceiver arranged at the other end of the body; a codec including a coder connected to the microphone, a decoder connected to the speaker, and a switch of which one node is connected to one of the coder and the decoder selectively and the other node is connected to the transceiver; and a communication controller which controls the switch to establish a path between the coder and the transceiver and enables the speaker in speakerphone mode.

Abstract translation: 一种设备和方法处理语音通信服务。 本公开的移动终端装置包括布置在设备的主体的一端的麦克风; 靠近麦克风布置的扬声器; 布置在身体另一端的收发器; 编解码器，包括连接到麦克风的编码器，连接到扬声器的解码器，以及一个节点选择性地连接到编码器和解码器之一的开关，另一个节点连接到收发器; 以及通信控制器，其控制开关以在编码器和收发器之间建立路径，并使扬声器处于扬声器模式。