公开(公告)号：US11482523B2

公开(公告)日：2022-10-25

申请号：US16661576

申请日：2019-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Ki Jung ,  Jae Hun Jeong ,  Chan Geun Ahn ,  Yoon Seok Lee ,  Soo Hun Hong

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device includes a first fin type pattern in a first region of a substrate. The first fin type pattern includes a plurality of spaced-apart fins having respective sidewalls defined by a first trench. A first gate structure is provided, which intersects the first fin type pattern. A second fin type pattern is provided in a second region of a substrate. The second fin type pattern includes a fin having a sidewall defined by a second trench. A second gate structure is provided, which intersects the second fin type pattern. A field insulating film fills at least a part of the first trench and at least a part of the second trench. The field insulating film has a first upper surface, which is in contact with at least one sidewall of the first fin type pattern and is spaced from a bottom of the first trench by a first height, and a second upper surface, which in contact with the sidewall of the second fin type pattern and is spaced from a bottom of the second trench by a second height different from the first height.

公开(公告)号：US20200212035A1

公开(公告)日：2020-07-02

申请号：US16661576

申请日：2019-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Ki Jung ,  Jae Hun Jeong ,  Chan Geun Ahn ,  Yoon Seok Lee ,  Soo Hun Hong

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L21/8234

Abstract: A semiconductor device includes a first fin type pattern in a first region of a substrate. The first fin type pattern includes a plurality of spaced-apart fins having respective sidewalls defined by a first trench. A first gate structure is provided, which intersects the first fin type pattern. A second fin type pattern is provided in a second region of a substrate. The second fin type pattern includes a fin having a sidewall defined by a second trench. A second gate structure is provided, which intersects the second fin type pattern. A field insulating film fills at least a part of the first trench and at least a part of the second trench. The field insulating film has a first upper surface, which is in contact with at least one sidewall of the first fin type pattern and is spaced from a bottom of the first trench by a first height, and a second upper surface, which in contact with the sidewall of the second fin type pattern and is spaced from a bottom of the second trench by a second height different from the first height.