公开(公告)号：US10784314B2

公开(公告)日：2020-09-22

申请号：US16555074

申请日：2019-08-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong Hyun Yoo ,  Eun Mi Kim ,  Joon Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Kyung Rae Byun ,  Sang Hoon Song

IPC分类号： H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/0224 ,  H01L31/0216 ,  H01L51/42

摘要： The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.

公开(公告)号：US11670657B2

公开(公告)日：2023-06-06

申请号：US17003224

申请日：2020-08-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Min Hwan Jeon ,  Doo Won Kwon ,  Chan Ho Park ,  Kyung Rae Byun ,  Dong-Chul Lee ,  Chong Kwang Chang

IPC分类号： H01L27/146 ,  H04N23/10

CPC分类号： H01L27/14621 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685 ,  H04N23/10

摘要： An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

公开(公告)号：US20230064084A1

公开(公告)日：2023-03-02

申请号：US17866805

申请日：2022-07-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： MINHWAN JEON ,  Chanho Park ,  Kyung Rae Byun ,  Chang Kyu Lee ,  Chongkwang Chang

IPC分类号： H01L27/146

摘要： An image sensor including: a semiconductor substrate including a plurality of pixel regions; an anti-reflection layer on the semiconductor substrate; color filters provided on the anti-reflection layer and in the pixel regions; and a fence structure disposed between adjacent ones of the color filters, wherein the fence structure includes: a lower portion penetrating the anti-reflection layer; an upper portion on the anti-reflection layer; and an intermediate portion between the lower portion and the upper portion, wherein the fence structure has undercut regions, which are provided at both sides of the intermediate portion and are between the upper portion of the fence structure and a top surface of the anti-reflection layer.

公开(公告)号：US10446611B2

公开(公告)日：2019-10-15

申请号：US16110518

申请日：2018-08-23

申请人： Samsung Electronics Co., Ltd.

发明人： Jong Hyun Yoo ,  Eun Mi Kim ,  Joon Kim ,  Chang Hwa Kim ,  Sang Su Park ,  Kyung Rae Byun ,  Sang Hoon Song

IPC分类号： H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/0224 ,  H01L31/0216 ,  H01L51/42

摘要： An image sensor may include a substrate having a plurality of pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the plurality of pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer to surround the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; and a color filter filling the trench. A protective film exposing the upper contact via, a first transparent electrode on the protective film and in contact with the upper contact via, and an organic photoelectric layer formed on the first transparent electrode may be provided.