Abstract:
Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.
Abstract:
A display device includes: a thin film transistor to which signals are provided for displaying an image, the thin film transistor including a semiconductor layer, a data signal line and a gate signal line; and a first electrode with which the image is displayed, the first electrode connected to the thin film transistor. One signal line among the data signal line and the gate signal line in the thin film transistor includes a metal layer and an organic layer which is disposed on the metal layer, and the organic layer is an ion-doped photosensitive resin material.
Abstract:
Provided is a polarizer. The polarizer includes a base layer and a wire grid layer which is disposed on the base layer and which include a plurality of wire metal patterns extending along a first direction and spaced apart from each other along a second direction crossing the first direction, wherein the wire grid layer is made of an aluminum (Al) alloy containing nickel (Ni) and lanthanum (La).
Abstract:
A sputtering apparatus includes a chamber, a target section disposed in the chamber, and a stage facing the target section. The target section includes a first target having a first diameter and a second target having a second diameter different from the first diameter. The first target and the second target each extend in a longitudinal direction and have a cylindrical shape, and the first and second diameters are respectively measured along a cross-section of corresponding first and second targets taken along a direction perpendicular to the longitudinal direction.
Abstract:
An exemplary embodiment provides a color conversion display panel including: a substrate including a display area and a light-blocking area; a metal oxide layer disposed on the substrate to overlap the display area and the light-blocking area; a reflective metal layer disposed on the metal oxide layer to overlap the light-blocking area; a color conversion layer disposed on the metal oxide layer which overlaps the display area to include semiconductor nanocrystals; and a transmission layer disposed on the metal oxide layer which overlaps the display area.
Abstract:
A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.
Abstract:
An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.
Abstract:
A display device may include a first base, a metal oxide layer overlapping a face of the first base, and a conductive metal layer directly contacting the metal oxide layer. The metal oxide layer may include molybdenum oxide. A side of the metal oxide layer may be oriented at a first angle relative to the face of the first base. A side of the conductive metal layer may be oriented at a second angle relative to the face of the first base. A size of the second angle may be in a range of 30° to 75°.
Abstract:
An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.
Abstract:
An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.