公开(公告)号：US11171000B2

公开(公告)日：2021-11-09

申请号：US16864812

申请日：2020-05-01

Applicant: Samsung Display Co., LTD.

Inventor： Jongoh Seo ,  Jonghoon Choi ,  Ji-Hwan Kim ,  Byung Soo So ,  Dong-Min Lee ,  Dong-Sung Lee

IPC: H01L21/02

Abstract: A laser crystallization system includes a transfer part that transfers a substrate on which an amorphous silicon thin film is deposited into a chamber, a laser irradiation part that irradiates an excimer laser to the substrate for crystallization of the amorphous silicon thin film in the chamber, a stage that supports the substrate in the chamber, a measuring part that measures a light transmittance value of the substrate, and a controller that controls the laser irradiation part to irradiate the excimer laser to the substrate when the light transmittance value is equal to or lower than a reference transmittance value and controls the laser irradiation part not to irradiate the excimer laser to the substrate when the light transmittance value is higher than the reference transmittance value.

公开(公告)号：US12058888B2

公开(公告)日：2024-08-06

申请号：US17503358

申请日：2021-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung Lee ,  Seo Jong Oh ,  Byung Soo So ,  Dong-min Lee

IPC: H10K59/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H10K59/12 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US12041715B2

公开(公告)日：2024-07-16

申请号：US16937816

申请日：2020-07-24

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunseung Seo ,  Jihyun Ko ,  Dong-Sung Lee ,  Changmoo Lee ,  Jonghwan Cho

IPC: H05K1/02 ,  H05K5/00 ,  H05K5/03

CPC classification number: H05K1/028 ,  H05K5/0017 ,  H05K5/03 ,  H05K2201/10128

Abstract: A cover window includes a base layer including a first flat portion and a first bending portion bent from a first end of the first flat portion and a coating layer including a first coating portion disposed on the first flat portion and a second coating portion disposed on the first bending portion and having a thickness less than a thickness of the first coating portion. A first end of the second coating portion has a thickness greater than a thickness of a second end of the second coating portion, and the first end of the second coating portion is closer to the first coating portion than the second end of the second coating portion is.

公开(公告)号：US11942481B2

公开(公告)日：2024-03-26

申请号：US17510995

申请日：2021-10-26

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02592 ,  H01L21/02675 ,  H01L27/1274 ,  H01L29/045 ,  H01L29/78675

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US11183515B2

公开(公告)日：2021-11-23

申请号：US16821484

申请日：2020-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US11873245B2

公开(公告)日：2024-01-16

申请号：US17077468

申请日：2020-10-22

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung Lee ,  Hyunseung Seo ,  Hui yeon Shon ,  Hyunkyung Yun ,  Changmoo Lee ,  Jonghwan Cho ,  Yongkyu Kang ,  Jihyun Ko

IPC: C03C17/32 ,  C03C17/22 ,  C03C23/00 ,  C03C17/34

CPC classification number: C03C17/326 ,  C03C17/22 ,  C03C17/3405 ,  C03C23/002

Abstract: A method of manufacturing a window includes preparing a base material layer, forming a first hard coating layer on the base material layer, and forming a second hard coating layer on the first hard coating layer. The forming of the second hard coating layer is performed in an environment having an oxygen concentration of about 0.01% to about 0.1%.

公开(公告)号：US11854804B2

公开(公告)日：2023-12-26

申请号：US17559415

申请日：2021-12-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hiroshi Okumura ,  Jongjun Baek ,  Dong-Sung Lee

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02691 ,  H01L21/67115 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686

Abstract: A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

公开(公告)号：US11164919B2

公开(公告)日：2021-11-02

申请号：US16679656

申请日：2019-11-11

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Seo Jong Oh ,  Byung Soo So ,  Dong-min Lee

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US11145703B2

公开(公告)日：2021-10-12

申请号：US16677042

申请日：2019-11-07

Applicant: Samsung Display Co., LTD.

Inventor： Jongoh Seo ,  In Cheol Ko ,  Byung Soo So ,  Dong-min Lee ,  Dong-Sung Lee

IPC: H01L27/15 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00

Abstract: A display device may include a substrate, a first layer on the substrate, the first layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a second layer on the first layer, an active pattern on the second layer, the active pattern overlapping only the first portion of the first layer, a gate electrode on the active pattern, a source electrode and a drain electrode on the gate electrode and connected to the active pattern, a first electrode connected to one of the source electrode and the drain electrode, a pixel defining layer on the first electrode, the pixel defining layer having an opening portion exposing at least a portion of the first electrode, an emission layer in the opening portion on the first electrode, and a second electrode on the emission layer.

公开(公告)号：US10411133B2

公开(公告)日：2019-09-10

申请号：US15948097

申请日：2018-04-09

Applicant: Samsung Display Co., Ltd.

Inventor： Jong Oh Seo ,  Byung Soo So ,  Dong-Min Lee ,  Dong-Sung Lee

IPC: H01L27/14 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.