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公开(公告)号:US12058888B2
公开(公告)日:2024-08-06
申请号:US17503358
申请日:2021-10-18
Applicant: Samsung Display Co., Ltd.
Inventor: Dong-Sung Lee , Seo Jong Oh , Byung Soo So , Dong-min Lee
IPC: H10K59/12 , H01L21/02 , H01L29/66 , H01L29/786
CPC classification number: H10K59/12 , H01L21/02057 , H01L21/02532 , H01L21/02592 , H01L21/02675 , H01L29/66757 , H01L29/78675
Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.
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2.
公开(公告)号:US20200161389A1
公开(公告)日:2020-05-21
申请号:US16679656
申请日:2019-11-11
Applicant: Samsung Display Co., LTD.
Inventor: Dong-Sung Lee , Seo Jong Oh , Byung Soo So , Dong-min Lee
IPC: H01L27/32 , H01L21/02 , H01L29/786 , H01L29/66
Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.
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公开(公告)号:US11164919B2
公开(公告)日:2021-11-02
申请号:US16679656
申请日:2019-11-11
Applicant: Samsung Display Co., LTD.
Inventor: Dong-Sung Lee , Seo Jong Oh , Byung Soo So , Dong-min Lee
IPC: H01L27/32 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.
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