公开(公告)号：US11164919B2

公开(公告)日：2021-11-02

申请号：US16679656

申请日：2019-11-11

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Seo Jong Oh ,  Byung Soo So ,  Dong-min Lee

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US11145703B2

公开(公告)日：2021-10-12

申请号：US16677042

申请日：2019-11-07

Applicant: Samsung Display Co., LTD.

Inventor： Jongoh Seo ,  In Cheol Ko ,  Byung Soo So ,  Dong-min Lee ,  Dong-Sung Lee

IPC: H01L27/15 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00

Abstract: A display device may include a substrate, a first layer on the substrate, the first layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a second layer on the first layer, an active pattern on the second layer, the active pattern overlapping only the first portion of the first layer, a gate electrode on the active pattern, a source electrode and a drain electrode on the gate electrode and connected to the active pattern, a first electrode connected to one of the source electrode and the drain electrode, a pixel defining layer on the first electrode, the pixel defining layer having an opening portion exposing at least a portion of the first electrode, an emission layer in the opening portion on the first electrode, and a second electrode on the emission layer.

公开(公告)号：US11961851B2

公开(公告)日：2024-04-16

申请号：US17672574

申请日：2022-02-15

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-min Lee ,  Ji-Hwan Kim ,  Jongoh Seo ,  Byung Soo So ,  Dong-Sung Lee ,  Jonghoon Choi

IPC: G02B27/14 ,  B23K26/53 ,  G02B27/12 ,  H01L21/02 ,  H01L27/12 ,  H01S3/00

CPC classification number: H01L27/1281 ,  B23K26/53 ,  G02B27/126 ,  H01L21/02675 ,  H01S3/005 ,  H01S3/0071 ,  H01L21/02532

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

公开(公告)号：US11407061B2

公开(公告)日：2022-08-09

申请号：US16698842

申请日：2019-11-27

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung Lee ,  Dong-min Lee ,  Jongoh Seo ,  Byung Soo So

IPC: B23K26/04 ,  B23K26/0622 ,  H01L21/02 ,  H01L21/20 ,  B23K101/40

Abstract: A laser crystallizing apparatus may include a laser light source, an optical system, and an optical module. The laser light source may generate a laser beam. The optical system may convert the laser beam into a line laser beam. The optical module may disperse energy of the line laser beam in a first direction for generating a dispersed line laser beam. The first direction may be perpendicular to a lengthwise direction of the optical module.

公开(公告)号：US20200161389A1

公开(公告)日：2020-05-21

申请号：US16679656

申请日：2019-11-11

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Seo Jong Oh ,  Byung Soo So ,  Dong-min Lee

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US12058888B2

公开(公告)日：2024-08-06

申请号：US17503358

申请日：2021-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung Lee ,  Seo Jong Oh ,  Byung Soo So ,  Dong-min Lee

IPC: H10K59/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H10K59/12 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US11942481B2

公开(公告)日：2024-03-26

申请号：US17510995

申请日：2021-10-26

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02592 ,  H01L21/02675 ,  H01L27/1274 ,  H01L29/045 ,  H01L29/78675

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US11183515B2

公开(公告)日：2021-11-23

申请号：US16821484

申请日：2020-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.