公开(公告)号：US12163992B2

公开(公告)日：2024-12-10

申请号：US18448517

申请日：2023-08-11

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Jun Ogi ,  Yuri Kato ,  Naohiko Kimizuka ,  Yoshihisa Matoba ,  Kan Shimizu

IPC: G01R29/24 ,  G01N27/414

Abstract: To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.

公开(公告)号：US11848346B2

公开(公告)日：2023-12-19

申请号：US17162221

申请日：2021-01-29

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Satoru Wakiyama ,  Kan Shimizu ,  Toshihiko Hayashi ,  Takuya Nakamura ,  Naoki Jyo

IPC: H01L23/00 ,  H01L27/146 ,  H01L23/31

CPC classification number: H01L27/14636 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/14 ,  H01L24/81 ,  H01L27/14607 ,  H01L27/14634 ,  H01L27/14643 ,  H01L23/3192 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/0239 ,  H01L2224/039 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/03616 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05082 ,  H01L2224/05157 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2224/81011 ,  H01L2224/8114 ,  H01L2224/81022 ,  H01L2224/81065 ,  H01L2224/8182 ,  H01L2224/81191 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2224/05157 ,  H01L2924/00014 ,  H01L2224/05187 ,  H01L2924/04941 ,  H01L2224/05181 ,  H01L2924/00014 ,  H01L2224/05187 ,  H01L2924/04953 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01049 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/0346 ,  H01L2924/00014 ,  H01L2224/03616 ,  H01L2924/00014 ,  H01L2224/0361 ,  H01L2924/00012 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2224/81464 ,  H01L2924/00014 ,  H01L2224/81444 ,  H01L2924/00014 ,  H01L2224/81469 ,  H01L2924/00014 ,  H01L2224/039 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03616 ,  H01L2224/0361 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2224/05571 ,  H01L2924/00012 ,  H01L2224/0239 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/45099

Abstract: An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

公开(公告)号：US10930695B2

公开(公告)日：2021-02-23

申请号：US15767944

申请日：2016-10-07

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Satoru Wakiyama ,  Kan Shimizu ,  Toshihiko Hayashi ,  Takuya Nakamura ,  Naoki Jyo

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/31

Abstract: An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

公开(公告)号：US11754610B2

公开(公告)日：2023-09-12

申请号：US16646185

申请日：2018-08-14

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Jun Ogi ,  Yuri Kato ,  Naohiko Kimizuka ,  Yoshihisa Matoba ,  Kan Shimizu

IPC: G01R29/24 ,  G01N27/414

CPC classification number: G01R29/24 ,  G01N27/4145

Abstract: To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.