公开(公告)号：US11848346B2

公开(公告)日：2023-12-19

申请号：US17162221

申请日：2021-01-29

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Satoru Wakiyama ,  Kan Shimizu ,  Toshihiko Hayashi ,  Takuya Nakamura ,  Naoki Jyo

IPC: H01L23/00 ,  H01L27/146 ,  H01L23/31

CPC classification number: H01L27/14636 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/14 ,  H01L24/81 ,  H01L27/14607 ,  H01L27/14634 ,  H01L27/14643 ,  H01L23/3192 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/0239 ,  H01L2224/039 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/03616 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05082 ,  H01L2224/05157 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2224/81011 ,  H01L2224/8114 ,  H01L2224/81022 ,  H01L2224/81065 ,  H01L2224/8182 ,  H01L2224/81191 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2224/05157 ,  H01L2924/00014 ,  H01L2224/05187 ,  H01L2924/04941 ,  H01L2224/05181 ,  H01L2924/00014 ,  H01L2224/05187 ,  H01L2924/04953 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01049 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/0346 ,  H01L2924/00014 ,  H01L2224/03616 ,  H01L2924/00014 ,  H01L2224/0361 ,  H01L2924/00012 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2224/81464 ,  H01L2924/00014 ,  H01L2224/81444 ,  H01L2924/00014 ,  H01L2224/81469 ,  H01L2924/00014 ,  H01L2224/039 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03616 ,  H01L2224/0361 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2224/05571 ,  H01L2924/00012 ,  H01L2224/0239 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2224/45099

Abstract: An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

公开(公告)号：US12148743B2

公开(公告)日：2024-11-19

申请号：US17299058

申请日：2019-12-10

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Takuya Nakamura

IPC: H01L25/16 ,  H01L23/48 ,  H01L33/44 ,  H01L33/62 ,  H01L33/64

Abstract: Provided is a semiconductor device including a drive circuit which is provided on one surface of a semiconductor substrate and drives a light emitting element, one of or a plurality of the light emitting elements which is provided on another surface of the semiconductor substrate, and a through electrode which penetrates the semiconductor substrate and electrically connects the drive circuit with the light emitting element.

公开(公告)号：US11887950B2

公开(公告)日：2024-01-30

申请号：US17293198

申请日：2019-10-17

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Takuya Nakamura

IPC: H01L23/00 ,  H01L27/146

CPC classification number: H01L24/06 ,  H01L24/03 ,  H01L24/04 ,  H01L24/05 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/1464 ,  H01L27/14627 ,  H01L2224/0239 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05083 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0601 ,  H01L2224/06505 ,  H01L2924/04941

Abstract: A solid-state imaging device to be provided includes a first semiconductor device including a semiconductor layer in which a photoelectric conversion unit that photoelectrically converts incident light and a penetrating via are provided, a first connecting portion and a second connecting portion on the surface side of the semiconductor layer on the side that receives the light, and a connecting wiring line that connects the first connecting portion, the second connecting portion, and the penetrating via. The solid-state imaging device further includes a second semiconductor device that is mounted on the first semiconductor device with the first connecting portion. The solid-state imaging device is connected to an external terminal by the second connecting portion.

公开(公告)号：US11784147B2

公开(公告)日：2023-10-10

申请号：US17499166

申请日：2021-10-12

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Takuya Nakamura

IPC: H01L23/00 ,  H01L27/146

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14685 ,  H01L2224/05011 ,  H01L2224/05576 ,  H01L2924/01013 ,  H01L2924/01029

Abstract: A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.

公开(公告)号：US10930695B2

公开(公告)日：2021-02-23

申请号：US15767944

申请日：2016-10-07

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Satoru Wakiyama ,  Kan Shimizu ,  Toshihiko Hayashi ,  Takuya Nakamura ,  Naoki Jyo

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/31

Abstract: An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

公开(公告)号：US11183472B2

公开(公告)日：2021-11-23

申请号：US16765332

申请日：2018-10-19

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Takuya Nakamura

IPC: H01L23/00 ,  H01L27/146

Abstract: Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.

公开(公告)号：US09997552B2

公开(公告)日：2018-06-12

申请号：US15508561

申请日：2015-08-28

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Susumu Inoue ,  Kentaro Akiyama ,  Junichiro Fujimagari ,  Keita Ishikawa ,  Jun Ogi ,  Yukio Tagawa ,  Takuya Nakamura ,  Satoru Wakiyama

IPC: H01L31/0232 ,  H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14618 ,  H01L27/14 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H04N5/369 ,  H01L2924/00

Abstract: The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent overflow of an underfilling resin filled in a portion adapted to connect the substrate to the flip chip and can prevent secondary damages such as electric short-circuit and contact with processing equipment. By utilizing a molding technology of forming an on-chip lens, a dam is formed in a ring shape or a square shape in a manner surrounding a range where a flip chip is connected via a solder bump on an upper layer of a substrate of the solid-state imaging device and provided in order to form the on-chip lens. This can block the underfilling resin filled in the range where the substrate and the flip chip are electrically connected. The present technology can be applied to a solid-state imaging device.